LUP Statistics
Record
- Title
- Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
- Type
- Conference Proceeding/Paper
- Publ. year
- 2017
- Author/s
- Memisevic, E.; Svensson, J.; Hellenbrand, M.; Lind, E. et al.
- Department/s
- Nano Electronics
- In LUP since
- 2017-03-15
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