LUP Statistics
Record
- Title
- Leakage current and breakdown of HfO2/InGaAs MOS capacitors
- Type
- Student Paper
- Publ. year
- 2015
- Author/s
- Winqvist, Edvin
- Department/s
- Department of Physics
- In LUP since
- 2015-06-05
Downloads
| Total | This Year | This Month |
| 1134 | 206 | 1 |
China  |
258 (23%) |
United States of America  |
199 (18%) |
South Korea  |
127 (11%) |
Germany  |
73 (6%) |
Sweden  |
70 (6%) |
India  |
55 (5%) |
Taiwan (China)  |
53 (5%) |
Japan  |
48 (4%) |
France  |
23 (2%) |
Russian Federation  |
23 (2%) |
Italy  |
18 (2%) |
United Kingdom of Great Britain and Northern Ireland  |
18 (2%) |
Belgium  |
15 (1%) |
Argentina  |
13 (1%) |
Brazil  |
13 (1%) |
Spain  |
12 (1%) |
Hong Kong (China)  |
10 (1%) |
Unknown  |
10 (1%) |
Algeria  |
9 (1%) |
Switzerland  |
6 (1%) |
Finland  |
5 (0%) |
Slovakia  |
5 (0%) |
Romania  |
5 (0%) |
Turkiye  |
5 (0%) |
Malaysia  |
4 (0%) |
Australia  |
4 (0%) |
Israel  |
4 (0%) |
Ireland  |
4 (0%) |
Canada  |
4 (0%) |
Mexico  |
4 (0%) |
Indonesia  |
3 (0%) |
Netherlands (Kingdom of the)  |
2 (0%) |
Tunisia  |
2 (0%) |
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2 (0%) |
Austria  |
2 (0%) |
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2 (0%) |
Moldova, The Republic of  |
2 (0%) |
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2 (0%) |
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1 (0%) |
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1 (0%) |
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1 (0%) |
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1 (0%) |
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1 (0%) |
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1 (0%) |
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1 (0%) |
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1 (0%) |
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1 (0%) |
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1 (0%) |