LUP Statistics
Record
- Title
- Leakage current and breakdown of HfO2/InGaAs MOS capacitors
- Type
- Student Paper
- Publ. year
- 2015
- Author/s
- Winqvist, Edvin
- Department/s
- Department of Physics
- In LUP since
- 2015-06-05
Downloads
| Total | This Year | This Month |
| 1185 | 17 | 5 |
China  |
263 (22%) |
United States of America  |
215 (18%) |
South Korea  |
128 (11%) |
Germany  |
73 (6%) |
Sweden  |
70 (6%) |
India  |
56 (5%) |
Taiwan (China)  |
55 (5%) |
Japan  |
48 (4%) |
Russian Federation  |
23 (2%) |
France  |
23 (2%) |
United Kingdom of Great Britain and Northern Ireland  |
21 (2%) |
Italy  |
18 (2%) |
Belgium  |
15 (1%) |
Brazil  |
14 (1%) |
Argentina  |
13 (1%) |
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12 (1%) |
Hong Kong (China)  |
10 (1%) |
Unknown  |
10 (1%) |
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9 (1%) |
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7 (1%) |
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7 (1%) |
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6 (1%) |
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6 (1%) |
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