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Record
Title
GaSb nanowire transistors with process induced strain
Type
Student Paper
Publ. year
2017
Author/s
Winqvist, Edvin
Department/s
Department of Physics; Combustion Physics
In LUP since
2017-06-08
Downloads

Total This Year This Month
225 48 4
Downloads per country

Sweden 41 (18%)
United States of America 38 (17%)
Germany 24 (11%)
China 23 (10%)
India 11 (5%)
United Kingdom of Great Britain and Northern Ireland 9 (4%)
South Africa 6 (3%)
Italy 6 (3%)
Russian Federation 5 (2%)
Hong Kong (China) 4 (2%)
Taiwan (China) 4 (2%)
Turkiye 4 (2%)
Norway 3 (1%)
Bulgaria 3 (1%)
Iran 3 (1%)
France 3 (1%)
Denmark 3 (1%)
Japan 3 (1%)
Latvia 3 (1%)
South Korea 2 (1%)
Malaysia 2 (1%)
Netherlands (Kingdom of the) 2 (1%)
Singapore 2 (1%)
Unknown 2 (1%)
Austria 2 (1%)
Romania 1 (0%)
Algeria 1 (0%)
Israel 1 (0%)
Bosnia and Herzegovina 1 (0%)
Finland 1 (0%)
Poland 1 (0%)
Bangladesh 1 (0%)
Lithuania 1 (0%)
Canada 1 (0%)
Ukraine 1 (0%)
Switzerland 1 (0%)
Thailand 1 (0%)
Iraq 1 (0%)
Brazil 1 (0%)
Australia 1 (0%)
About
The download statistics shown here have been collected since the launch of LUP in October 2007 and are updated every night. Statistics are available for all records with open access fulltexts. Efforts have been made to exclude downloads by robots and track irregular download activities.

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Disclaimer
The information on downloads per country is based on the geolocation of IP addresses and may not be completely accurate. The statistics presented here may also change retroactively when the calculation process is improved to provide more accurate results.

Statistics Last Updated
Thu Sep 19 08:45:00 2024