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Record
Title
Epitaxial growth and processing of high-aspect ratio InGaAs fins for advanced MOSFETs
Type
Student Paper
Publ. year
2017
Author/s
Malmgren, Andreas
Department/s
Department of Physics; Solid State Physics
In LUP since
2017-06-12
Downloads

Total This Year This Month
690 27 0
Downloads per country

Sweden 142 (21%)
United States of America 127 (18%)
China 72 (10%)
Taiwan (China) 57 (8%)
South Korea 35 (5%)
Japan 26 (4%)
Germany 25 (4%)
Netherlands (Kingdom of the) 22 (3%)
France 14 (2%)
Russian Federation 12 (2%)
Algeria 12 (2%)
Canada 11 (2%)
India 11 (2%)
Belgium 10 (1%)
United Kingdom of Great Britain and Northern Ireland 10 (1%)
Singapore 8 (1%)
Denmark 8 (1%)
Hong Kong (China) 8 (1%)
Poland 8 (1%)
Austria 7 (1%)
Turkiye 6 (1%)
Australia 6 (1%)
Switzerland 6 (1%)
Iran 5 (1%)
Saudi Arabia 4 (1%)
Malaysia 4 (1%)
Italy 4 (1%)
Czechia 3 (0%)
Hungary 3 (0%)
Tunisia 3 (0%)
Brazil 3 (0%)
Finland 2 (0%)
Mexico 2 (0%)
Ethiopia 2 (0%)
Lithuania 2 (0%)
Indonesia 2 (0%)
Unknown 2 (0%)
Bangladesh 1 (0%)
Thailand 1 (0%)
Panama 1 (0%)
Philippines 1 (0%)
Spain 1 (0%)
Bosnia and Herzegovina 1 (0%)
About
The download statistics shown here have been collected since the launch of LUP in October 2007 and are updated every night. Statistics are available for all records with open access fulltexts. Efforts have been made to exclude downloads by robots and track irregular download activities.

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Disclaimer
The information on downloads per country is based on the geolocation of IP addresses and may not be completely accurate. The statistics presented here may also change retroactively when the calculation process is improved to provide more accurate results.

Statistics Last Updated
Fri Aug 1 08:40:12 2025