LUP Statistics
Record
- Title
- Epitaxial growth and processing of high-aspect ratio InGaAs fins for advanced MOSFETs
- Type
- Student Paper
- Publ. year
- 2017
- Author/s
- Malmgren, Andreas
- Department/s
- Department of Physics; Solid State Physics
- In LUP since
- 2017-06-12
Downloads
| Total | This Year | This Month |
| 633 | 25 | 2 |
Sweden  |
139 (22%) |
United States of America  |
103 (16%) |
China  |
62 (10%) |
Taiwan (China)  |
57 (9%) |
South Korea  |
34 (5%) |
Japan  |
25 (4%) |
Netherlands (Kingdom of the)  |
22 (3%) |
Germany  |
21 (3%) |
Algeria  |
12 (2%) |
France  |
12 (2%) |
India  |
11 (2%) |
Canada  |
10 (2%) |
Belgium  |
10 (2%) |
United Kingdom of Great Britain and Northern Ireland  |
9 (1%) |
Russian Federation  |
9 (1%) |
Poland  |
7 (1%) |
Austria  |
7 (1%) |
Denmark  |
7 (1%) |
Hong Kong (China)  |
7 (1%) |
Singapore  |
7 (1%) |
Switzerland  |
6 (1%) |
Australia  |
6 (1%) |
Turkiye  |
5 (1%) |
Italy  |
4 (1%) |
Malaysia  |
4 (1%) |
Iran  |
4 (1%) |
Saudi Arabia  |
4 (1%) |
Czechia  |
3 (0%) |
Hungary  |
3 (0%) |
Tunisia  |
3 (0%) |
Brazil  |
3 (0%) |
Unknown  |
2 (0%) |
Finland  |
2 (0%) |
Mexico  |
2 (0%) |
Lithuania  |
2 (0%) |
Ethiopia  |
2 (0%) |
Indonesia  |
1 (0%) |
Panama  |
1 (0%) |
Thailand  |
1 (0%) |
Bangladesh  |
1 (0%) |
Spain  |
1 (0%) |
Bosnia and Herzegovina  |
1 (0%) |
Philippines  |
1 (0%) |