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Record
Title
Reactive Ion Etching of Silicon using F-based chemistry - Exploring the Limits
Type
Student Paper
Publ. year
2018
Author/s
Havir, Harald
Department/s
Solid State Physics; Department of Physics
In LUP since
2018-07-04
Downloads

Total This Year This Month
511 88 3
Downloads per country

United States of America 87 (17%)
Sweden 82 (16%)
Russian Federation 36 (7%)
Germany 33 (6%)
Taiwan (China) 27 (5%)
South Korea 26 (5%)
China 22 (4%)
India 17 (3%)
France 16 (3%)
Netherlands (Kingdom of the) 13 (3%)
Finland 13 (3%)
Czechia 12 (2%)
Hong Kong (China) 11 (2%)
United Kingdom of Great Britain and Northern Ireland 11 (2%)
Denmark 10 (2%)
Singapore 10 (2%)
Japan 9 (2%)
Unknown 7 (1%)
Italy 6 (1%)
Portugal 5 (1%)
Belgium 5 (1%)
Australia 4 (1%)
Poland 4 (1%)
Spain 4 (1%)
Turkiye 4 (1%)
Saudi Arabia 4 (1%)
Sri Lanka 3 (1%)
Iran 3 (1%)
Switzerland 2 (0%)
Mexico 2 (0%)
Algeria 2 (0%)
Slovenia 2 (0%)
Canada 2 (0%)
Malaysia 2 (0%)
Kenya 2 (0%)
Norway 2 (0%)
South Africa 1 (0%)
Palestinian Territory 1 (0%)
Hungary 1 (0%)
Egypt 1 (0%)
Lebanon 1 (0%)
Austria 1 (0%)
Israel 1 (0%)
Brazil 1 (0%)
About
The download statistics shown here have been collected since the launch of LUP in October 2007 and are updated every night. Statistics are available for all records with open access fulltexts. Efforts have been made to exclude downloads by robots and track irregular download activities.

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Disclaimer
The information on downloads per country is based on the geolocation of IP addresses and may not be completely accurate. The statistics presented here may also change retroactively when the calculation process is improved to provide more accurate results.

Statistics Last Updated
Sat Sep 21 08:39:30 2024