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Record
Title
Reactive Ion Etching of Silicon using F-based chemistry - Exploring the Limits
Type
Student Paper
Publ. year
2018
Author/s
Havir, Harald
Department/s
Solid State Physics; Department of Physics
In LUP since
2018-07-04
Downloads

Total This Year This Month
744 12 12
Downloads per country

United States of America 159 (22%)
Sweden 106 (15%)
Germany 54 (7%)
Russian Federation 44 (6%)
South Korea 34 (5%)
Taiwan (China) 32 (4%)
China 27 (4%)
India 23 (3%)
France 22 (3%)
United Kingdom of Great Britain and Northern Ireland 18 (2%)
Netherlands (Kingdom of the) 17 (2%)
Finland 15 (2%)
Singapore 15 (2%)
Hong Kong (China) 15 (2%)
Czechia 14 (2%)
Denmark 11 (2%)
Unknown 9 (1%)
Belgium 9 (1%)
Japan 9 (1%)
Australia 8 (1%)
Italy 8 (1%)
Turkiye 6 (1%)
Canada 6 (1%)
Portugal 5 (1%)
Spain 5 (1%)
Poland 5 (1%)
Saudi Arabia 4 (1%)
New Zealand 3 (0%)
Sri Lanka 3 (0%)
Israel 3 (0%)
Viet Nam 3 (0%)
Iran 3 (0%)
Switzerland 3 (0%)
South Africa 2 (0%)
Slovenia 2 (0%)
Algeria 2 (0%)
Austria 2 (0%)
Mexico 2 (0%)
Norway 2 (0%)
Malaysia 2 (0%)
Kenya 2 (0%)
Indonesia 1 (0%)
Thailand 1 (0%)
Bangladesh 1 (0%)
Romania 1 (0%)
Palestinian Territory 1 (0%)
Egypt 1 (0%)
Latvia 1 (0%)
Ă…land Islands 1 (0%)
Ukraine 1 (0%)
Lebanon 1 (0%)
Lithuania 1 (0%)
Hungary 1 (0%)
Brazil 1 (0%)
About
The download statistics shown here have been collected since the launch of LUP in October 2007 and are updated every night. Statistics are available for all records with open access fulltexts. Efforts have been made to exclude downloads by robots and track irregular download activities.

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Disclaimer
The information on downloads per country is based on the geolocation of IP addresses and may not be completely accurate. The statistics presented here may also change retroactively when the calculation process is improved to provide more accurate results.

Statistics Last Updated
Tue Jan 20 08:38:22 2026