Skip to main content
Record
Title
Development of Ferroelectric Hafnium Oxide for Negative Capacitance Field Effect Transistors
Type
Student Paper
Publ. year
2019
Author/s
Atle, Robin
Department/s
Department of Electrical and Information Technology
In LUP since
2019-03-26
Downloads

Total This Year This Month
731 60 1
Downloads per country

Sweden 135 (18%)
India 107 (15%)
United States of America 97 (13%)
South Korea 84 (11%)
France 35 (5%)
China 31 (4%)
Taiwan (China) 30 (4%)
Unknown 28 (4%)
Germany 24 (3%)
Japan 22 (3%)
Hong Kong (China) 15 (2%)
Russian Federation 13 (2%)
United Kingdom of Great Britain and Northern Ireland 10 (1%)
Netherlands (Kingdom of the) 8 (1%)
Iran 8 (1%)
Finland 8 (1%)
Viet Nam 7 (1%)
Italy 6 (1%)
Singapore 6 (1%)
Canada 6 (1%)
Greece 6 (1%)
Switzerland 4 (1%)
Belgium 3 (0%)
Indonesia 3 (0%)
Algeria 3 (0%)
Bangladesh 3 (0%)
Spain 3 (0%)
Mexico 3 (0%)
Brazil 2 (0%)
Australia 2 (0%)
Morocco 2 (0%)
Poland 2 (0%)
Thailand 2 (0%)
Peru 1 (0%)
Luxembourg 1 (0%)
Saudi Arabia 1 (0%)
Egypt 1 (0%)
Turkiye 1 (0%)
Czechia 1 (0%)
Norway 1 (0%)
Israel 1 (0%)
Austria 1 (0%)
Estonia 1 (0%)
Kazakhstan 1 (0%)
Tunisia 1 (0%)
Yemen 1 (0%)
About
The download statistics shown here have been collected since the launch of LUP in October 2007 and are updated every night. Statistics are available for all records with open access fulltexts. Efforts have been made to exclude downloads by robots and track irregular download activities.

About accessibility

Disclaimer
The information on downloads per country is based on the geolocation of IP addresses and may not be completely accurate. The statistics presented here may also change retroactively when the calculation process is improved to provide more accurate results.

Statistics Last Updated
Wed Jul 17 08:57:33 2024