Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures
(2018) In Journal of Applied Physics 123(6).- Abstract
Graphene/hexagonal boron nitride (G/h-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we report on transport measurements of nearly 0°-twisted G/h-BN heterostructures. The heterostructures investigated are prepared by dry transfer and thermally annealing processes and are in the low mobility regime (approximately 3000 cm2 V-1s-1 at 1.9 K). The replica Dirac spectra and Hofstadter butterfly spectra are observed on the hole transport side, but not on the electron transport side, of the heterostructures. We associate the observed electron-hole asymmetry with the... (More)
Graphene/hexagonal boron nitride (G/h-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we report on transport measurements of nearly 0°-twisted G/h-BN heterostructures. The heterostructures investigated are prepared by dry transfer and thermally annealing processes and are in the low mobility regime (approximately 3000 cm2 V-1s-1 at 1.9 K). The replica Dirac spectra and Hofstadter butterfly spectra are observed on the hole transport side, but not on the electron transport side, of the heterostructures. We associate the observed electron-hole asymmetry with the presence of a large difference between the opened gaps in the conduction and valence bands and a strong enhancement in the interband contribution to the conductivity on the electron transport side in the low-mobility G/h-BN heterostructures. We also show that the gaps opened at the central Dirac point and the hole-branch secondary Dirac point are large, suggesting the presence of strong graphene-substrate interaction and electron-electron interaction in our G/h-BN heterostructures. Our results provide additional helpful insight into the transport mechanism in G/h-BN heterostructures.
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- author
- Li, Jiayu ; Lin, Li ; Huang, Guang Yao ; Kang, N. ; Zhang, Jincan ; Peng, Hailin ; Liu, Zhongfan and Xu, H. Q. LU
- organization
- publishing date
- 2018-02-14
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Applied Physics
- volume
- 123
- issue
- 6
- article number
- 064303
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85042067895
- ISSN
- 0021-8979
- DOI
- 10.1063/1.5009742
- language
- English
- LU publication?
- yes
- id
- 047e2431-8980-4778-a608-f17cfdcce261
- date added to LUP
- 2018-03-06 12:10:36
- date last changed
- 2023-11-17 15:16:59
@article{047e2431-8980-4778-a608-f17cfdcce261,
abstract = {{<p>Graphene/hexagonal boron nitride (G/h-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we report on transport measurements of nearly 0°-twisted G/h-BN heterostructures. The heterostructures investigated are prepared by dry transfer and thermally annealing processes and are in the low mobility regime (approximately 3000 cm<sup>2</sup> V<sup>-1</sup>s<sup>-1</sup> at 1.9 K). The replica Dirac spectra and Hofstadter butterfly spectra are observed on the hole transport side, but not on the electron transport side, of the heterostructures. We associate the observed electron-hole asymmetry with the presence of a large difference between the opened gaps in the conduction and valence bands and a strong enhancement in the interband contribution to the conductivity on the electron transport side in the low-mobility G/h-BN heterostructures. We also show that the gaps opened at the central Dirac point and the hole-branch secondary Dirac point are large, suggesting the presence of strong graphene-substrate interaction and electron-electron interaction in our G/h-BN heterostructures. Our results provide additional helpful insight into the transport mechanism in G/h-BN heterostructures.</p>}},
author = {{Li, Jiayu and Lin, Li and Huang, Guang Yao and Kang, N. and Zhang, Jincan and Peng, Hailin and Liu, Zhongfan and Xu, H. Q.}},
issn = {{0021-8979}},
language = {{eng}},
month = {{02}},
number = {{6}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Journal of Applied Physics}},
title = {{Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures}},
url = {{http://dx.doi.org/10.1063/1.5009742}},
doi = {{10.1063/1.5009742}},
volume = {{123}},
year = {{2018}},
}