Controlled polytypic and twin-plane superlattices in iii-v nanowires.
Caroff, Philippe LU ; Dick Thelander, Kimberly LU ; Johansson, Jonas LU
; Messing, Maria
LU
; Deppert, Knut
LU
and Samuelson, Lars
LU
(2009)
In Nature Nanotechnology
4(1).
p.50-55
- Abstract
- Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport studies, quantum optics and biological sensing. Such applications require a high degree of nanowire growth control, right down to the atomic level. However, many binary semiconductor nanowires exhibit a high density of randomly distributed twin defects and stacking faults, which results in an uncontrolled, or polytypic, crystal structure. Here, we demonstrate full control of the crystal structure of InAs nanowires by varying nanowire diameter and growth temperature. By selectively tuning the crystal structure, we fabricate highly reproducible polytypic and twin-plane superlattices within single nanowires. In addition to reducing defect... (More)
- Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport studies, quantum optics and biological sensing. Such applications require a high degree of nanowire growth control, right down to the atomic level. However, many binary semiconductor nanowires exhibit a high density of randomly distributed twin defects and stacking faults, which results in an uncontrolled, or polytypic, crystal structure. Here, we demonstrate full control of the crystal structure of InAs nanowires by varying nanowire diameter and growth temperature. By selectively tuning the crystal structure, we fabricate highly reproducible polytypic and twin-plane superlattices within single nanowires. In addition to reducing defect densities, this level of control could lead to bandgap engineering and novel electronic behaviour. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1290023
- author
- Caroff, Philippe
LU
; Dick Thelander, Kimberly
LU
; Johansson, Jonas
LU
; Messing, Maria
LU
; Deppert, Knut
LU
and Samuelson, Lars
LU
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nature Nanotechnology
- volume
- 4
- issue
- 1
- pages
- 50 - 55
- publisher
- Nature Publishing Group
- external identifiers
-
- wos:000262638700016
- pmid:19119283
- scopus:58149269212
- ISSN
- 1748-3395
- DOI
- 10.1038/nnano.2008.359
- language
- English
- LU publication?
- yes
- id
- 648a0bfa-e2d3-4d1b-bb4d-be14f8534223 (old id 1290023)
- date added to LUP
- 2016-04-01 11:35:29
- date last changed
- 2022-04-28 08:56:38
@article{648a0bfa-e2d3-4d1b-bb4d-be14f8534223,
abstract = {{Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport studies, quantum optics and biological sensing. Such applications require a high degree of nanowire growth control, right down to the atomic level. However, many binary semiconductor nanowires exhibit a high density of randomly distributed twin defects and stacking faults, which results in an uncontrolled, or polytypic, crystal structure. Here, we demonstrate full control of the crystal structure of InAs nanowires by varying nanowire diameter and growth temperature. By selectively tuning the crystal structure, we fabricate highly reproducible polytypic and twin-plane superlattices within single nanowires. In addition to reducing defect densities, this level of control could lead to bandgap engineering and novel electronic behaviour.}},
author = {{Caroff, Philippe and Dick Thelander, Kimberly and Johansson, Jonas and Messing, Maria and Deppert, Knut and Samuelson, Lars}},
issn = {{1748-3395}},
language = {{eng}},
number = {{1}},
pages = {{50--55}},
publisher = {{Nature Publishing Group}},
series = {{Nature Nanotechnology}},
title = {{Controlled polytypic and twin-plane superlattices in iii-v nanowires.}},
url = {{http://dx.doi.org/10.1038/nnano.2008.359}},
doi = {{10.1038/nnano.2008.359}},
volume = {{4}},
year = {{2009}},
}