Optical absorption of polarized light in InAs/GaSb quantum wells
(2008) In Semiconductor Science and Technology 23(12).- Abstract
- Using an eight-band k . p model Hamiltonian with the Burt-Foreman envelope function theory, we have investigated the optical absorption of both linearly and circularly polarized light, as well as related phenomena in InAs/GaSb broken-gap quantum wells grown along the [0 0 1] direction, with emphasis on the effects of electron-hole hybridization and the various symmetry-breaking mechanisms such as structural inversion asymmetry, bulk inversion asymmetry and interface Hamiltonian. The optical matrix elements exhibit unusual angular dependence in close connection with the spin-flip transitions which are originally forbidden. The spin split of the 2e subband results in two profound absorption peaks for the 1hh-2e transition for both linearly... (More)
- Using an eight-band k . p model Hamiltonian with the Burt-Foreman envelope function theory, we have investigated the optical absorption of both linearly and circularly polarized light, as well as related phenomena in InAs/GaSb broken-gap quantum wells grown along the [0 0 1] direction, with emphasis on the effects of electron-hole hybridization and the various symmetry-breaking mechanisms such as structural inversion asymmetry, bulk inversion asymmetry and interface Hamiltonian. The optical matrix elements exhibit unusual angular dependence in close connection with the spin-flip transitions which are originally forbidden. The spin split of the 2e subband results in two profound absorption peaks for the 1hh-2e transition for both linearly polarized and circularly polarized light. A large lateral optical anisotropy appears in the absorption coefficient of linearly polarized light, which can reach almost 100% with a reducing thickness of the quantum well. For the absorption of circularly polarized light, we found a large enhancement of electron spin polarization in the upper 2e subband, which was generally considered as forbidden if the polarization is along the direction perpendicular to the plane-of-light incidence. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1305810
- author
- Zakharova, A. ; Semenikhin, I. and Chao, Koung-An LU
- organization
- publishing date
- 2008
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Semiconductor Science and Technology
- volume
- 23
- issue
- 12
- article number
- 125044
- publisher
- IOP Publishing
- external identifiers
-
- wos:000261114300046
- scopus:58149476913
- ISSN
- 0268-1242
- DOI
- 10.1088/0268-1242/23/12/125044
- language
- English
- LU publication?
- yes
- id
- eb4ce34e-bd3e-4485-b16a-cebdee69bf03 (old id 1305810)
- date added to LUP
- 2016-04-01 13:29:18
- date last changed
- 2022-04-14 01:25:38
@article{eb4ce34e-bd3e-4485-b16a-cebdee69bf03,
abstract = {{Using an eight-band k . p model Hamiltonian with the Burt-Foreman envelope function theory, we have investigated the optical absorption of both linearly and circularly polarized light, as well as related phenomena in InAs/GaSb broken-gap quantum wells grown along the [0 0 1] direction, with emphasis on the effects of electron-hole hybridization and the various symmetry-breaking mechanisms such as structural inversion asymmetry, bulk inversion asymmetry and interface Hamiltonian. The optical matrix elements exhibit unusual angular dependence in close connection with the spin-flip transitions which are originally forbidden. The spin split of the 2e subband results in two profound absorption peaks for the 1hh-2e transition for both linearly polarized and circularly polarized light. A large lateral optical anisotropy appears in the absorption coefficient of linearly polarized light, which can reach almost 100% with a reducing thickness of the quantum well. For the absorption of circularly polarized light, we found a large enhancement of electron spin polarization in the upper 2e subband, which was generally considered as forbidden if the polarization is along the direction perpendicular to the plane-of-light incidence.}},
author = {{Zakharova, A. and Semenikhin, I. and Chao, Koung-An}},
issn = {{0268-1242}},
language = {{eng}},
number = {{12}},
publisher = {{IOP Publishing}},
series = {{Semiconductor Science and Technology}},
title = {{Optical absorption of polarized light in InAs/GaSb quantum wells}},
url = {{http://dx.doi.org/10.1088/0268-1242/23/12/125044}},
doi = {{10.1088/0268-1242/23/12/125044}},
volume = {{23}},
year = {{2008}},
}