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Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs

Lind, Erik LU ; Persson, Martin LU ; Niquet, Yann-Michel and Wernersson, Lars-Erik LU (2009) In IEEE Transactions on Electron Devices 56(2). p.201-205
Abstract
We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing... (More)
We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing improvements as the device is scaled. The very small intrinsic gate capacitance in the quantum limit makes the device susceptible to parasitic capacitances. (Less)
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Band structure, field-effect transistor (FET), InAs, nanowire
in
IEEE Transactions on Electron Devices
volume
56
issue
2
pages
201 - 205
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000262816800007
  • scopus:59949097581
ISSN
0018-9383
DOI
10.1109/TED.2008.2010587
language
English
LU publication?
yes
id
96fa597e-c487-4e7d-89d5-0c6df2febef1 (old id 1311479)
date added to LUP
2016-04-01 14:53:46
date last changed
2022-03-29 23:25:53
@article{96fa597e-c487-4e7d-89d5-0c6df2febef1,
  abstract     = {{We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing improvements as the device is scaled. The very small intrinsic gate capacitance in the quantum limit makes the device susceptible to parasitic capacitances.}},
  author       = {{Lind, Erik and Persson, Martin and Niquet, Yann-Michel and Wernersson, Lars-Erik}},
  issn         = {{0018-9383}},
  keywords     = {{Band structure; field-effect transistor (FET); InAs; nanowire}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{201--205}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs}},
  url          = {{http://dx.doi.org/10.1109/TED.2008.2010587}},
  doi          = {{10.1109/TED.2008.2010587}},
  volume       = {{56}},
  year         = {{2009}},
}