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Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

Sun, Jie LU ; Larsson, Marcus LU ; Maximov, Ivan LU ; Hardtdegen, Hilde and Xu, Hongqi LU (2009) In Applied Physics Letters 94(4).
Abstract
Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.
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author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
quantum, well devices, semiconductor quantum dots, quantum interference devices, nanotechnology, indium compounds, III-V semiconductors, high-k dielectric thin films, hafnium compounds, g-factor, gallium arsenide, atomic layer deposition, Coulomb blockade
in
Applied Physics Letters
volume
94
issue
4
article number
042114
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000262971800059
  • scopus:59349120065
ISSN
0003-6951
DOI
10.1063/1.3077188
language
English
LU publication?
yes
id
9ef1290c-e035-42ae-959a-31055e85b8bc (old id 1311595)
date added to LUP
2016-04-01 12:28:54
date last changed
2022-02-03 22:45:30
@article{9ef1290c-e035-42ae-959a-31055e85b8bc,
  abstract     = {{Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.}},
  author       = {{Sun, Jie and Larsson, Marcus and Maximov, Ivan and Hardtdegen, Hilde and Xu, Hongqi}},
  issn         = {{0003-6951}},
  keywords     = {{quantum; well devices; semiconductor quantum dots; quantum interference devices; nanotechnology; indium compounds; III-V semiconductors; high-k dielectric thin films; hafnium compounds; g-factor; gallium arsenide; atomic layer deposition; Coulomb blockade}},
  language     = {{eng}},
  number       = {{4}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric}},
  url          = {{http://dx.doi.org/10.1063/1.3077188}},
  doi          = {{10.1063/1.3077188}},
  volume       = {{94}},
  year         = {{2009}},
}