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Substrate orientation: a way towards higher quality monolayer graphene growth on 6H-SiC(0001)

Virojanadara, C. ; Yakimova, R. ; Osiecki, J.R. ; Syväjärvi, M. ; Uhrberg, R.I.G. ; Johansson, L.I. and Zakharov, Alexei LU (2009) In Surface Science 603(15). p.87-90
Abstract
The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03°) than on those with a larger (0.25°). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene–SiC structures.
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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Surface Science
volume
603
issue
15
pages
87 - 90
publisher
Elsevier
external identifiers
  • wos:000268371000001
  • scopus:67649354231
ISSN
0039-6028
DOI
10.1016/j.susc.2009.05.005
language
English
LU publication?
yes
id
6ece5bbb-befa-400c-9235-a465c0cb3d35 (old id 1457634)
date added to LUP
2016-04-01 15:04:55
date last changed
2022-04-22 06:42:17
@article{6ece5bbb-befa-400c-9235-a465c0cb3d35,
  abstract     = {{The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03°) than on those with a larger (0.25°). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene–SiC structures.}},
  author       = {{Virojanadara, C. and Yakimova, R. and Osiecki, J.R. and Syväjärvi, M. and Uhrberg, R.I.G. and Johansson, L.I. and Zakharov, Alexei}},
  issn         = {{0039-6028}},
  language     = {{eng}},
  number       = {{15}},
  pages        = {{87--90}},
  publisher    = {{Elsevier}},
  series       = {{Surface Science}},
  title        = {{Substrate orientation: a way towards higher quality monolayer graphene growth on 6H-SiC(0001)}},
  url          = {{http://dx.doi.org/10.1016/j.susc.2009.05.005}},
  doi          = {{10.1016/j.susc.2009.05.005}},
  volume       = {{603}},
  year         = {{2009}},
}