Buffer layer free large area bi-layer graphene on SiC(0001)
(2010) In Surface Science 604(2). p.4-7- Abstract
- The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (mu-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0 0 0 1). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950... (More)
- The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (mu-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0 0 0 1). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950 degrees C. A tentative model of hydrogen intercalation is suggested to explain this single to bi-layer graphene transformation mechanism. Our findings are of relevance and importance for various potential applications based on graphene-SiC structures and hydrogen storage. (C) 2009 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1568446
- author
- Virojanadara, C. ; Zakharov, Alexei LU ; Yakimova, R. and Johansson, L. I.
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- LEEM, Silicon carbide, Epitaxial, Graphene, Bi-layer, PES, Hydrogenation, LEED
- in
- Surface Science
- volume
- 604
- issue
- 2
- pages
- 4 - 7
- publisher
- Elsevier
- external identifiers
-
- wos:000274591000002
- scopus:72649089151
- ISSN
- 0039-6028
- DOI
- 10.1016/j.susc.2009.11.011
- language
- English
- LU publication?
- yes
- id
- 0dfe453b-d930-4644-b9de-7e34df9ea5b7 (old id 1568446)
- date added to LUP
- 2016-04-01 14:04:33
- date last changed
- 2022-04-14 07:52:29
@article{0dfe453b-d930-4644-b9de-7e34df9ea5b7,
abstract = {{The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (mu-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0 0 0 1). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950 degrees C. A tentative model of hydrogen intercalation is suggested to explain this single to bi-layer graphene transformation mechanism. Our findings are of relevance and importance for various potential applications based on graphene-SiC structures and hydrogen storage. (C) 2009 Elsevier B.V. All rights reserved.}},
author = {{Virojanadara, C. and Zakharov, Alexei and Yakimova, R. and Johansson, L. I.}},
issn = {{0039-6028}},
keywords = {{LEEM; Silicon carbide; Epitaxial; Graphene; Bi-layer; PES; Hydrogenation; LEED}},
language = {{eng}},
number = {{2}},
pages = {{4--7}},
publisher = {{Elsevier}},
series = {{Surface Science}},
title = {{Buffer layer free large area bi-layer graphene on SiC(0001)}},
url = {{http://dx.doi.org/10.1016/j.susc.2009.11.011}},
doi = {{10.1016/j.susc.2009.11.011}},
volume = {{604}},
year = {{2010}},
}