Low-frequency noise in vertical InAs nanowire FETs
Persson, Karl-Magnus LU ; Lind, Erik LU ; Dey, Anil LU ; Thelander, Claes LU ; Sjöland, Henrik LU
and Wernersson, Lars-Erik
LU
(2010)
In IEEE Electron Device Letters
31(5).
p.428-430
- Abstract
- This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-kappa dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power S-I/I-d(2) measures 7.3 x 10(-7) Hz(-1). Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be 4.2 x 10(-3).
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1601805
- author
- Persson, Karl-Magnus
LU
; Lind, Erik
LU
; Dey, Anil
LU
; Thelander, Claes
LU
; Sjöland, Henrik
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- nanowire (NW), InAs, FET, flicker noise
- in
- IEEE Electron Device Letters
- volume
- 31
- issue
- 5
- pages
- 428 - 430
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000277047300016
- scopus:77951877916
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2010.2043637
- language
- English
- LU publication?
- yes
- id
- e83993c9-5475-4778-89bf-e86b34eaeec2 (old id 1601805)
- alternative location
- http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5437236
- date added to LUP
- 2016-04-01 14:16:25
- date last changed
- 2024-01-10 01:18:00
@article{e83993c9-5475-4778-89bf-e86b34eaeec2,
abstract = {{This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-kappa dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power S-I/I-d(2) measures 7.3 x 10(-7) Hz(-1). Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be 4.2 x 10(-3).}},
author = {{Persson, Karl-Magnus and Lind, Erik and Dey, Anil and Thelander, Claes and Sjöland, Henrik and Wernersson, Lars-Erik}},
issn = {{0741-3106}},
keywords = {{nanowire (NW); InAs; FET; flicker noise}},
language = {{eng}},
number = {{5}},
pages = {{428--430}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
series = {{IEEE Electron Device Letters}},
title = {{Low-frequency noise in vertical InAs nanowire FETs}},
url = {{https://lup.lub.lu.se/search/files/3882809/2335626.pdf}},
doi = {{10.1109/LED.2010.2043637}},
volume = {{31}},
year = {{2010}},
}