Coulomb blockade transport across lateral (Ga,Mn)As nanoconstrictions
(2010) 18th International Conference on the Electronic Properties of Two-Dimensional Systems ( EP2DS18)/14th International Conference on Modulated Semiconductor Structures ( MSS14) 42(10). p.2676-2680- Abstract
- We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanation for the observed spin-valve like behavior during a magnetic field sweep by means of the magnetization configurations in the device. Furthermore, we prove that Coulomb blockade plays a decisive role for the transport mechanism and show that modeling the constriction as a granular metal describes the temperature and bias dependence of the... (More)
- We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanation for the observed spin-valve like behavior during a magnetic field sweep by means of the magnetization configurations in the device. Furthermore, we prove that Coulomb blockade plays a decisive role for the transport mechanism and show that modeling the constriction as a granular metal describes the temperature and bias dependence of the conductance correctly and allows to estimate the number of participating islands located in the constriction. (C) 2010 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1752110
- author
- Schlapps, Markus ; Geissler, Stefan ; Lermer, Teresa ; Sadowski, Janusz LU ; Wegscheider, Werner and Weiss, Dieter
- organization
- publishing date
- 2010
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Single electron devices, blockade, Coulomb, Magnetic-semiconductor structures, Nanoscale contacts, Magnetotransport phenomena, Transport and tunneling
- host publication
- Physica E-Low-Dimensional Systems & Nanostructures
- volume
- 42
- issue
- 10
- pages
- 2676 - 2680
- publisher
- Elsevier
- conference name
- 18th International Conference on the Electronic Properties of Two-Dimensional Systems ( EP2DS18)/14th International Conference on Modulated Semiconductor Structures ( MSS14)
- conference location
- Kobe, Japan
- conference dates
- 2009-07-19 - 2009-07-24
- external identifiers
-
- wos:000284723200051
- scopus:77957989808
- ISSN
- 1386-9477
- DOI
- 10.1016/j.physe.2009.12.055
- language
- English
- LU publication?
- yes
- id
- 56762021-6b02-4a09-bd1f-17afab6ba0cf (old id 1752110)
- date added to LUP
- 2016-04-01 13:51:10
- date last changed
- 2022-01-27 21:27:17
@inproceedings{56762021-6b02-4a09-bd1f-17afab6ba0cf,
abstract = {{We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanation for the observed spin-valve like behavior during a magnetic field sweep by means of the magnetization configurations in the device. Furthermore, we prove that Coulomb blockade plays a decisive role for the transport mechanism and show that modeling the constriction as a granular metal describes the temperature and bias dependence of the conductance correctly and allows to estimate the number of participating islands located in the constriction. (C) 2010 Elsevier B.V. All rights reserved.}},
author = {{Schlapps, Markus and Geissler, Stefan and Lermer, Teresa and Sadowski, Janusz and Wegscheider, Werner and Weiss, Dieter}},
booktitle = {{Physica E-Low-Dimensional Systems & Nanostructures}},
issn = {{1386-9477}},
keywords = {{Single electron devices; blockade; Coulomb; Magnetic-semiconductor structures; Nanoscale contacts; Magnetotransport phenomena; Transport and tunneling}},
language = {{eng}},
number = {{10}},
pages = {{2676--2680}},
publisher = {{Elsevier}},
title = {{Coulomb blockade transport across lateral (Ga,Mn)As nanoconstrictions}},
url = {{http://dx.doi.org/10.1016/j.physe.2009.12.055}},
doi = {{10.1016/j.physe.2009.12.055}},
volume = {{42}},
year = {{2010}},
}