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Nonlinear electrical properties of Si three-terminal junction devices

Meng, Fantao ; Sun, Jie LU ; Graczyk, Mariusz LU ; Zhang, Kailiang ; Prunnila, Mika ; Ahopelto, Jouni ; Shi, Peixiong ; Chu, Jinkui ; Maximov, Ivan LU and Xu, Hongqi LU (2010) In Applied Physics Letters 97(24).
Abstract
This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
97
issue
24
article number
242106
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000285481000031
  • scopus:78650376760
ISSN
0003-6951
DOI
10.1063/1.3526725
language
English
LU publication?
yes
id
0ab4acf6-d38f-49f9-bda3-121030efbb9a (old id 1831254)
date added to LUP
2016-04-01 09:50:07
date last changed
2022-04-27 08:01:53
@article{0ab4acf6-d38f-49f9-bda3-121030efbb9a,
  abstract     = {{This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]}},
  author       = {{Meng, Fantao and Sun, Jie and Graczyk, Mariusz and Zhang, Kailiang and Prunnila, Mika and Ahopelto, Jouni and Shi, Peixiong and Chu, Jinkui and Maximov, Ivan and Xu, Hongqi}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{24}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Nonlinear electrical properties of Si three-terminal junction devices}},
  url          = {{http://dx.doi.org/10.1063/1.3526725}},
  doi          = {{10.1063/1.3526725}},
  volume       = {{97}},
  year         = {{2010}},
}