Demonstration of hexagonal phase silicon carbide nanowire arrays with vertical alignment
Luna, Lunet E. ; Ophus, Colin ; Johansson, Jonas LU
; Maboudian, Roya
and Carraro, Carlo
(2016)
In Crystal Growth and Design
16(5).
p.2887-2892
- Abstract
SiC nanowire based electronics hold promise for data collection in harsh environments wherein conventional semiconductor platforms would fail. However, the full adaptation of SiC nanowires as a material platform necessitates strict control of nanowire crystal structure and orientation for reliable performance. Toward such efforts, we report the growth of hexagonal phase SiC nanowire arrays grown with vertical alignment on commercially available single crystalline SiC substrates. The nanowire hexagonality, confirmed with Raman spectroscopy and atomic resolution microscopy, displays a polytypic distribution of predominantly 2H and 4H. Employing a theoretical growth model, the polytypic distribution of hexagonal phase nanowires is... (More)
SiC nanowire based electronics hold promise for data collection in harsh environments wherein conventional semiconductor platforms would fail. However, the full adaptation of SiC nanowires as a material platform necessitates strict control of nanowire crystal structure and orientation for reliable performance. Toward such efforts, we report the growth of hexagonal phase SiC nanowire arrays grown with vertical alignment on commercially available single crystalline SiC substrates. The nanowire hexagonality, confirmed with Raman spectroscopy and atomic resolution microscopy, displays a polytypic distribution of predominantly 2H and 4H. Employing a theoretical growth model, the polytypic distribution of hexagonal phase nanowires is accurately predicted in the regime of high supersaturation. Additionally, the reduction of disorder-induced phonon density of states is achieved while maintaining nanowire morphology through a postgrowth anneal. The results of this work expand the repertoire of SiC nanowires by implementing a low-temperature method that promotes polytypes outside the well-studied cubic phase and introduces uniform, vertical alignment on industry standard SiC substrates.
(Less)
- author
- Luna, Lunet E.
; Ophus, Colin
; Johansson, Jonas
LU
; Maboudian, Roya
and Carraro, Carlo
- organization
- publishing date
- 2016-05-04
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Crystal Growth and Design
- volume
- 16
- issue
- 5
- pages
- 6 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000375520900052
- scopus:84969505829
- ISSN
- 1528-7483
- DOI
- 10.1021/acs.cgd.6b00203
- language
- English
- LU publication?
- yes
- id
- 20a7e7eb-a575-465e-96e1-af9772a23b81
- date added to LUP
- 2016-09-28 13:58:46
- date last changed
- 2024-01-04 13:23:39
@article{20a7e7eb-a575-465e-96e1-af9772a23b81,
abstract = {{<p>SiC nanowire based electronics hold promise for data collection in harsh environments wherein conventional semiconductor platforms would fail. However, the full adaptation of SiC nanowires as a material platform necessitates strict control of nanowire crystal structure and orientation for reliable performance. Toward such efforts, we report the growth of hexagonal phase SiC nanowire arrays grown with vertical alignment on commercially available single crystalline SiC substrates. The nanowire hexagonality, confirmed with Raman spectroscopy and atomic resolution microscopy, displays a polytypic distribution of predominantly 2H and 4H. Employing a theoretical growth model, the polytypic distribution of hexagonal phase nanowires is accurately predicted in the regime of high supersaturation. Additionally, the reduction of disorder-induced phonon density of states is achieved while maintaining nanowire morphology through a postgrowth anneal. The results of this work expand the repertoire of SiC nanowires by implementing a low-temperature method that promotes polytypes outside the well-studied cubic phase and introduces uniform, vertical alignment on industry standard SiC substrates.</p>}},
author = {{Luna, Lunet E. and Ophus, Colin and Johansson, Jonas and Maboudian, Roya and Carraro, Carlo}},
issn = {{1528-7483}},
language = {{eng}},
month = {{05}},
number = {{5}},
pages = {{2887--2892}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Crystal Growth and Design}},
title = {{Demonstration of hexagonal phase silicon carbide nanowire arrays with vertical alignment}},
url = {{http://dx.doi.org/10.1021/acs.cgd.6b00203}},
doi = {{10.1021/acs.cgd.6b00203}},
volume = {{16}},
year = {{2016}},
}