Recent advances in semiconductor nanowire heterostructures
(2011) In CrystEngComm 13(24). p.7175-7184- Abstract
- Semiconductor nanowires have made a deep impact on materials science related research, and are being explored for applications in several disciplines. Many of these applications require heterostructures, which can be defined as the combination of two or more materials within the same nanowire structure. In this paper we briefly review the current state-of-the-art concerning epitaxial nanowire heterostructures. We discuss growth, understanding, and promising applications of such structures, which we divide into three categories: nanowire-substrate, axial, and radial heterostructures. For each of these categories, we review recent experimental results, and address possible difficulties and how they have been resolved. In addition, we also... (More)
- Semiconductor nanowires have made a deep impact on materials science related research, and are being explored for applications in several disciplines. Many of these applications require heterostructures, which can be defined as the combination of two or more materials within the same nanowire structure. In this paper we briefly review the current state-of-the-art concerning epitaxial nanowire heterostructures. We discuss growth, understanding, and promising applications of such structures, which we divide into three categories: nanowire-substrate, axial, and radial heterostructures. For each of these categories, we review recent experimental results, and address possible difficulties and how they have been resolved. In addition, we also highlight interesting applications relying on heterostructures in nanowires. To illustrate that nanowires and their heterostructures have been grown in a plethora of materials, we pick examples from a wide range of semiconductor materials. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2272151
- author
- Johansson, Jonas LU and Dick Thelander, Kimberly LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- CrystEngComm
- volume
- 13
- issue
- 24
- pages
- 7175 - 7184
- publisher
- Royal Society of Chemistry
- external identifiers
-
- wos:000297362900001
- scopus:81855187176
- ISSN
- 1466-8033
- DOI
- 10.1039/c1ce05821e
- language
- English
- LU publication?
- yes
- id
- c179ac9b-902f-4193-bb78-871c4583134f (old id 2272151)
- date added to LUP
- 2016-04-01 13:14:35
- date last changed
- 2023-11-12 13:43:32
@article{c179ac9b-902f-4193-bb78-871c4583134f, abstract = {{Semiconductor nanowires have made a deep impact on materials science related research, and are being explored for applications in several disciplines. Many of these applications require heterostructures, which can be defined as the combination of two or more materials within the same nanowire structure. In this paper we briefly review the current state-of-the-art concerning epitaxial nanowire heterostructures. We discuss growth, understanding, and promising applications of such structures, which we divide into three categories: nanowire-substrate, axial, and radial heterostructures. For each of these categories, we review recent experimental results, and address possible difficulties and how they have been resolved. In addition, we also highlight interesting applications relying on heterostructures in nanowires. To illustrate that nanowires and their heterostructures have been grown in a plethora of materials, we pick examples from a wide range of semiconductor materials.}}, author = {{Johansson, Jonas and Dick Thelander, Kimberly}}, issn = {{1466-8033}}, language = {{eng}}, number = {{24}}, pages = {{7175--7184}}, publisher = {{Royal Society of Chemistry}}, series = {{CrystEngComm}}, title = {{Recent advances in semiconductor nanowire heterostructures}}, url = {{http://dx.doi.org/10.1039/c1ce05821e}}, doi = {{10.1039/c1ce05821e}}, volume = {{13}}, year = {{2011}}, }