Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties
(2011) In Nano Letters 11(12). p.5401-5407- Abstract
- A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers... (More)
- A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2279241
- author
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Graphene, nitrogen doping, electronic structure, synthesis, triazine, ARPES
- in
- Nano Letters
- volume
- 11
- issue
- 12
- pages
- 5401 - 5407
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000297950200052
- scopus:83655172551
- pmid:22077830
- ISSN
- 1530-6992
- DOI
- 10.1021/nl2031037
- language
- English
- LU publication?
- yes
- id
- f720bf9e-1b61-4364-bdb6-8ba5e73b3ea7 (old id 2279241)
- date added to LUP
- 2016-04-01 14:38:39
- date last changed
- 2022-04-22 04:24:15
@article{f720bf9e-1b61-4364-bdb6-8ba5e73b3ea7,
abstract = {{A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.}},
author = {{Usachov, D. and Vilkov, O. and Grueneis, A. and Haberer, D. and Fedorov, A. and Adamchuk, V. K. and Preobrajenski, Alexei and Dudin, P. and Barinov, A. and Oehzelt, M. and Laubschat, C. and Vyalikh, D. V.}},
issn = {{1530-6992}},
keywords = {{Graphene; nitrogen doping; electronic structure; synthesis; triazine; ARPES}},
language = {{eng}},
number = {{12}},
pages = {{5401--5407}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties}},
url = {{http://dx.doi.org/10.1021/nl2031037}},
doi = {{10.1021/nl2031037}},
volume = {{11}},
year = {{2011}},
}