Effect of resonant impurity scattering on the carrier dynamics in Si/SiGe quantum wells
(2005) In Physical Review B (Condensed Matter and Materials Physics) 72(4).- Abstract
- We have performed Monte Carlo simulations of the electron drift velocity in a delta-doped Si/SiGe quantum well, for high and low temperatures as well as strong and weak electric field. All scattering matrix elements of intervalley phonons, acoustic phonons, interface roughness, and impurity ions are calculated from the electron wave functions. Special attention was paid to the resonant state scattering which is far from understood both theoretically and experimentally. When the position of the delta-doped donor layer moves from the center of the quantum well to deep inside the barrier, we found for the first time the dramatic effect of the resonant state scattering on electron drift velocity. This effect is dominated by the resonant level... (More)
- We have performed Monte Carlo simulations of the electron drift velocity in a delta-doped Si/SiGe quantum well, for high and low temperatures as well as strong and weak electric field. All scattering matrix elements of intervalley phonons, acoustic phonons, interface roughness, and impurity ions are calculated from the electron wave functions. Special attention was paid to the resonant state scattering which is far from understood both theoretically and experimentally. When the position of the delta-doped donor layer moves from the center of the quantum well to deep inside the barrier, we found for the first time the dramatic effect of the resonant state scattering on electron drift velocity. This effect is dominated by the resonant level broadening, which depends on the position of the delta-doped donor layer. Relative relaxation time of various scattering mechanisms was also derived from the Monte Carlo simulation. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/231378
- author
- Vettchinkina, Valeria LU ; Blom, Anders LU and Chao, Koung-An LU
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 72
- issue
- 4
- publisher
- American Physical Society
- external identifiers
-
- wos:000230890300086
- scopus:33749233585
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.72.045303
- language
- English
- LU publication?
- yes
- id
- 9ce89f84-f194-4fb2-b0e8-f67208805e88 (old id 231378)
- date added to LUP
- 2016-04-01 16:08:49
- date last changed
- 2022-03-14 22:25:17
@article{9ce89f84-f194-4fb2-b0e8-f67208805e88,
abstract = {{We have performed Monte Carlo simulations of the electron drift velocity in a delta-doped Si/SiGe quantum well, for high and low temperatures as well as strong and weak electric field. All scattering matrix elements of intervalley phonons, acoustic phonons, interface roughness, and impurity ions are calculated from the electron wave functions. Special attention was paid to the resonant state scattering which is far from understood both theoretically and experimentally. When the position of the delta-doped donor layer moves from the center of the quantum well to deep inside the barrier, we found for the first time the dramatic effect of the resonant state scattering on electron drift velocity. This effect is dominated by the resonant level broadening, which depends on the position of the delta-doped donor layer. Relative relaxation time of various scattering mechanisms was also derived from the Monte Carlo simulation.}},
author = {{Vettchinkina, Valeria and Blom, Anders and Chao, Koung-An}},
issn = {{1098-0121}},
language = {{eng}},
number = {{4}},
publisher = {{American Physical Society}},
series = {{Physical Review B (Condensed Matter and Materials Physics)}},
title = {{Effect of resonant impurity scattering on the carrier dynamics in Si/SiGe quantum wells}},
url = {{https://lup.lub.lu.se/search/files/4582849/2520345.pdf}},
doi = {{10.1103/PhysRevB.72.045303}},
volume = {{72}},
year = {{2005}},
}