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Dual-gate induced InP nanowire diode

Storm, Kristian LU ; Nylund, Gustav LU ; Borgström, Magnus LU ; Wallentin, Jesper LU ; Fasth, Carina LU ; Thelander, Claes LU and Samuelson, Lars LU (2011) 30th International Conference on the Physics of Semiconductors (ICPS-30) 1399. p.279-280
Abstract
Semiconductor devices are heavily dependent on dopant incorporation in order to control the electrical properties. In this paper we investigate the possibility of using gates wrapped around a nanowire (NW) channel as a way of tuning the Fermi level position, in certain cases removing the need for dopants and providing a more dynamical way of setting the device properties. InP NW devices with omega gates are fabricated, and a p-n junction is formed in a nominally intrinsic NW channel. In order to further increase the electrostatic control of the channel and other device properties, vertical devices are discussed as a promising way of implementing this type of device.
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author
; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Fermi level tuning, InP, wrap-gate, nanowire
host publication
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
volume
1399
pages
279 - 280
publisher
American Institute of Physics (AIP)
conference name
30th International Conference on the Physics of Semiconductors (ICPS-30)
conference location
Seoul, Korea, Republic of
conference dates
2010-07-25 - 2010-07-30
external identifiers
  • wos:000301053000124
  • scopus:84855497453
ISSN
1551-7616
0094-243X
DOI
10.1063/1.3666362
language
English
LU publication?
yes
id
e418ee94-467d-4242-bbff-38cdbf15520d (old id 2493678)
date added to LUP
2016-04-01 09:53:11
date last changed
2024-01-06 02:19:08
@inproceedings{e418ee94-467d-4242-bbff-38cdbf15520d,
  abstract     = {{Semiconductor devices are heavily dependent on dopant incorporation in order to control the electrical properties. In this paper we investigate the possibility of using gates wrapped around a nanowire (NW) channel as a way of tuning the Fermi level position, in certain cases removing the need for dopants and providing a more dynamical way of setting the device properties. InP NW devices with omega gates are fabricated, and a p-n junction is formed in a nominally intrinsic NW channel. In order to further increase the electrostatic control of the channel and other device properties, vertical devices are discussed as a promising way of implementing this type of device.}},
  author       = {{Storm, Kristian and Nylund, Gustav and Borgström, Magnus and Wallentin, Jesper and Fasth, Carina and Thelander, Claes and Samuelson, Lars}},
  booktitle    = {{Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors}},
  issn         = {{1551-7616}},
  keywords     = {{Fermi level tuning; InP; wrap-gate; nanowire}},
  language     = {{eng}},
  pages        = {{279--280}},
  publisher    = {{American Institute of Physics (AIP)}},
  title        = {{Dual-gate induced InP nanowire diode}},
  url          = {{http://dx.doi.org/10.1063/1.3666362}},
  doi          = {{10.1063/1.3666362}},
  volume       = {{1399}},
  year         = {{2011}},
}