Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect
Dick Thelander, Kimberly LU ; Bolinsson, Jessica LU ; Borg, Mattias LU
and Johansson, Jonas
LU
(2012)
In Nano Letters
12(6).
p.3200-3206
- Abstract
- Heterostructure nanowires have many potential applications due to the avoidance of interface defects by lateral strain relaxation. However, most heterostructure semiconductor nanowires suffer from persistent interface compositional grading, normally attributed to the dissolution of growth species in the common alloy seed particles. Although progress has been made for some material systems, most binary material combinations remain problematic due to the interaction of growth species in the alloy. In this work we investigate the formation of interfaces in InAs-GaAs heterostructures experimentally and theoretically and demonstrate a technique to attain substantially sharper interfaces. We show that by pulsing the Ga source during... (More)
- Heterostructure nanowires have many potential applications due to the avoidance of interface defects by lateral strain relaxation. However, most heterostructure semiconductor nanowires suffer from persistent interface compositional grading, normally attributed to the dissolution of growth species in the common alloy seed particles. Although progress has been made for some material systems, most binary material combinations remain problematic due to the interaction of growth species in the alloy. In this work we investigate the formation of interfaces in InAs-GaAs heterostructures experimentally and theoretically and demonstrate a technique to attain substantially sharper interfaces. We show that by pulsing the Ga source during heterojunction formation, In is pushed out before GaAs growth initiates, greatly reducing In carry-over. This procedure will be directly applicable to any nanowire system with finite nonideal solubility of growth species in the alloy seed particle and greatly improve the applicability of these structures in future devices. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2892351
- author
- Dick Thelander, Kimberly
LU
; Bolinsson, Jessica
LU
; Borg, Mattias
LU
and Johansson, Jonas
LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanowire, heterostructure, III-V semiconductor, MOVPE, XEDS
- in
- Nano Letters
- volume
- 12
- issue
- 6
- pages
- 3200 - 3206
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000305106400091
- scopus:84862285908
- pmid:22642741
- ISSN
- 1530-6992
- DOI
- 10.1021/nl301185x
- language
- English
- LU publication?
- yes
- id
- 326d3d9d-e9ef-4d6c-9c26-52b58d4efe04 (old id 2892351)
- date added to LUP
- 2016-04-01 12:56:08
- date last changed
- 2023-11-12 09:38:20
@article{326d3d9d-e9ef-4d6c-9c26-52b58d4efe04,
abstract = {{Heterostructure nanowires have many potential applications due to the avoidance of interface defects by lateral strain relaxation. However, most heterostructure semiconductor nanowires suffer from persistent interface compositional grading, normally attributed to the dissolution of growth species in the common alloy seed particles. Although progress has been made for some material systems, most binary material combinations remain problematic due to the interaction of growth species in the alloy. In this work we investigate the formation of interfaces in InAs-GaAs heterostructures experimentally and theoretically and demonstrate a technique to attain substantially sharper interfaces. We show that by pulsing the Ga source during heterojunction formation, In is pushed out before GaAs growth initiates, greatly reducing In carry-over. This procedure will be directly applicable to any nanowire system with finite nonideal solubility of growth species in the alloy seed particle and greatly improve the applicability of these structures in future devices.}},
author = {{Dick Thelander, Kimberly and Bolinsson, Jessica and Borg, Mattias and Johansson, Jonas}},
issn = {{1530-6992}},
keywords = {{Nanowire; heterostructure; III-V semiconductor; MOVPE; XEDS}},
language = {{eng}},
number = {{6}},
pages = {{3200--3206}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect}},
url = {{http://dx.doi.org/10.1021/nl301185x}},
doi = {{10.1021/nl301185x}},
volume = {{12}},
year = {{2012}},
}