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Direct observation of structural relaxation in amorphous compound semiconductors

Azevedo, GD ; Glover, Chris LU ; Yu, KM ; Foran, GJ and Ridgway, MC (2003) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 206. p.1024-1027
Abstract
Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated by point-defect annihilation with concomitant reduction in both chemical and structural disorder. Though relaxation yields a decrease in chemical disorder, homopolar bonding is still retained in the fully relaxed amorphous structure. (C) 2003 Elsevier Science B.V. All rights reserved.
Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
amorphous solids, ion implantation, InAs, EXAFS
in
Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
volume
206
pages
1024 - 1027
publisher
Elsevier
external identifiers
  • wos:000183690500218
  • scopus:0037736647
ISSN
0168-583X
DOI
10.1016/S0168-583X(03)00926-1
language
English
LU publication?
yes
id
72b25fda-af21-4ad0-bff6-59d2b7fbe393 (old id 308013)
date added to LUP
2016-04-01 17:14:40
date last changed
2022-04-23 03:41:44
@article{72b25fda-af21-4ad0-bff6-59d2b7fbe393,
  abstract     = {{Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated by point-defect annihilation with concomitant reduction in both chemical and structural disorder. Though relaxation yields a decrease in chemical disorder, homopolar bonding is still retained in the fully relaxed amorphous structure. (C) 2003 Elsevier Science B.V. All rights reserved.}},
  author       = {{Azevedo, GD and Glover, Chris and Yu, KM and Foran, GJ and Ridgway, MC}},
  issn         = {{0168-583X}},
  keywords     = {{amorphous solids; ion implantation; InAs; EXAFS}},
  language     = {{eng}},
  pages        = {{1024--1027}},
  publisher    = {{Elsevier}},
  series       = {{Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms}},
  title        = {{Direct observation of structural relaxation in amorphous compound semiconductors}},
  url          = {{http://dx.doi.org/10.1016/S0168-583X(03)00926-1}},
  doi          = {{10.1016/S0168-583X(03)00926-1}},
  volume       = {{206}},
  year         = {{2003}},
}