In-Plane Magnetic Anisotropy and Temperature Dependence of Switching Field in (Ga, Mn)As Ferromagnetic Semiconductors
(2012) In Journal of Nanoscience and Nanotechnology 12(6). p.4868-4873- Abstract
- We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H
is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two
regions of temperature. At T <TC/2, the “square-shape” signal and at T >TC/2 the “zigzag-shape” signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization
reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density... (More) - We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H
is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two
regions of temperature. At T <TC/2, the “square-shape” signal and at T >TC/2 the “zigzag-shape” signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization
reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3128760
- author
- Kamara, S. ; Terki, F. ; Charar, S. ; Dehbaoui, M. ; Sadowski, Janusz LU and Galera, R. -M.
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- ferromagnetic semiconductors, spintronics, Planar Hall effect
- in
- Journal of Nanoscience and Nanotechnology
- volume
- 12
- issue
- 6
- pages
- 4868 - 4873
- publisher
- American Scientific Publishers
- external identifiers
-
- wos:000306861000061
- scopus:84863952012
- ISSN
- 1533-4880
- DOI
- 10.1166/jnn.2012.4923
- language
- English
- LU publication?
- yes
- id
- d2f84617-07fb-432e-82c2-bef858cc84dc (old id 3128760)
- date added to LUP
- 2016-04-01 10:15:22
- date last changed
- 2022-01-25 21:28:03
@article{d2f84617-07fb-432e-82c2-bef858cc84dc,
abstract = {{We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H<br/><br>
is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two<br/><br>
regions of temperature. At T <TC/2, the “square-shape” signal and at T >TC/2 the “zigzag-shape” signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization<br/><br>
reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements.}},
author = {{Kamara, S. and Terki, F. and Charar, S. and Dehbaoui, M. and Sadowski, Janusz and Galera, R. -M.}},
issn = {{1533-4880}},
keywords = {{ferromagnetic semiconductors; spintronics; Planar Hall effect}},
language = {{eng}},
number = {{6}},
pages = {{4868--4873}},
publisher = {{American Scientific Publishers}},
series = {{Journal of Nanoscience and Nanotechnology}},
title = {{In-Plane Magnetic Anisotropy and Temperature Dependence of Switching Field in (Ga, Mn)As Ferromagnetic Semiconductors}},
url = {{http://dx.doi.org/10.1166/jnn.2012.4923}},
doi = {{10.1166/jnn.2012.4923}},
volume = {{12}},
year = {{2012}},
}