Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films
(2003) In Applied Physics Letters 82(14). p.2287-2289- Abstract
- We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. (C) 2003 American Institute of Physics.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/315007
- author
- Sorensen, BS ; Lindelof, PE ; Sadowski, Janusz LU ; Mathieu, R and Svedlindh, P
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 82
- issue
- 14
- pages
- 2287 - 2289
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000182018800031
- scopus:0345373811
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1566097
- language
- English
- LU publication?
- yes
- id
- 634a35a0-b6dc-47f5-96f5-620a73364cad (old id 315007)
- date added to LUP
- 2016-04-01 12:02:11
- date last changed
- 2022-01-26 21:50:47
@article{634a35a0-b6dc-47f5-96f5-620a73364cad, abstract = {{We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. (C) 2003 American Institute of Physics.}}, author = {{Sorensen, BS and Lindelof, PE and Sadowski, Janusz and Mathieu, R and Svedlindh, P}}, issn = {{0003-6951}}, language = {{eng}}, number = {{14}}, pages = {{2287--2289}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films}}, url = {{http://dx.doi.org/10.1063/1.1566097}}, doi = {{10.1063/1.1566097}}, volume = {{82}}, year = {{2003}}, }