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A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes

Suhara, M ; Ooki, S ; Wernersson, Lars-Erik LU ; Seifert, Werner LU ; Samuelson, Lars LU and Okumura, T (2002) ISCS 2001 p.363-367
Abstract
In this paper we proposed a method for evaluating a homogeneous broadening (DeltaE(h)) and inhomogeneous broadening (DeltaE(i)) of the resonant energy level width independently by using current-voltage characteristics in double barrier resonant tunneling diodes (DBRTDs). The line shape of the resonant energy broadening is assumed as a convolution of Lorentz function and a Gauss function. Measured transmittance in GaAs0.25P0.75/GaAs DBRTDs grown by MOCVD is well fit to the convolution function. The DeltaE(h), DeltaE(i) were estimated as 4.3[meV] and 1.0 [meV], respectively, where the measured energy-voltage conversion factor 17 is 0.3[eV/V].
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author
; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
Compound Semiconductors 2001 (Institute of Physics Conference Series)
issue
170
pages
363 - 367
publisher
IOP Publishing
conference name
ISCS 2001
conference location
Tokyo, Japan
conference dates
2001-10-01 - 2001-10-04
external identifiers
  • wos:000179011200059
ISSN
0951-3248
language
English
LU publication?
yes
id
18a5ddf1-75c6-4ee3-af02-a99a4056cb6a (old id 324575)
date added to LUP
2016-04-01 16:49:45
date last changed
2018-11-21 20:44:32
@inproceedings{18a5ddf1-75c6-4ee3-af02-a99a4056cb6a,
  abstract     = {{In this paper we proposed a method for evaluating a homogeneous broadening (DeltaE(h)) and inhomogeneous broadening (DeltaE(i)) of the resonant energy level width independently by using current-voltage characteristics in double barrier resonant tunneling diodes (DBRTDs). The line shape of the resonant energy broadening is assumed as a convolution of Lorentz function and a Gauss function. Measured transmittance in GaAs0.25P0.75/GaAs DBRTDs grown by MOCVD is well fit to the convolution function. The DeltaE(h), DeltaE(i) were estimated as 4.3[meV] and 1.0 [meV], respectively, where the measured energy-voltage conversion factor 17 is 0.3[eV/V].}},
  author       = {{Suhara, M and Ooki, S and Wernersson, Lars-Erik and Seifert, Werner and Samuelson, Lars and Okumura, T}},
  booktitle    = {{Compound Semiconductors 2001 (Institute of Physics Conference Series)}},
  issn         = {{0951-3248}},
  language     = {{eng}},
  number       = {{170}},
  pages        = {{363--367}},
  publisher    = {{IOP Publishing}},
  title        = {{A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes}},
  year         = {{2002}},
}