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Photoemission study of GaAs (100) grown at low temperature

Asklund, H ; Ilver, L ; Kanski, J ; Sadowski, Janusz LU and Karlsteen, M (2002) In Physical Review B (Condensed Matter and Materials Physics) 65(11).
Abstract
GaAs(100) layers grown by low-temperature (LT) molecular beam epitaxy were studied by means of valence-band and core-level photoelectron spectroscopy. Small differences were found between valence-band spectra from the LT layers and corresponding layers grown at high temperature. In the Ga 3d spectra a new component was found in the LT-GaAs. The relative intensity of this component was found to be practically constant with varying probing depth. It is proposed that this component represents sites coordinated to the five-atom As clusters formed at As-Ga antisites. This interpretation implies a higher density of antisite defects in the near-surface region than typically found in the bulk.
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author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
65
issue
11
publisher
American Physical Society
external identifiers
  • wos:000174548400104
  • scopus:0037087943
ISSN
1098-0121
DOI
10.1103/PhysRevB.65.115335
language
English
LU publication?
yes
id
66d71b3e-4220-470e-b618-5bfbacc5e6be (old id 341775)
date added to LUP
2016-04-01 16:16:44
date last changed
2022-04-07 07:03:56
@article{66d71b3e-4220-470e-b618-5bfbacc5e6be,
  abstract     = {{GaAs(100) layers grown by low-temperature (LT) molecular beam epitaxy were studied by means of valence-band and core-level photoelectron spectroscopy. Small differences were found between valence-band spectra from the LT layers and corresponding layers grown at high temperature. In the Ga 3d spectra a new component was found in the LT-GaAs. The relative intensity of this component was found to be practically constant with varying probing depth. It is proposed that this component represents sites coordinated to the five-atom As clusters formed at As-Ga antisites. This interpretation implies a higher density of antisite defects in the near-surface region than typically found in the bulk.}},
  author       = {{Asklund, H and Ilver, L and Kanski, J and Sadowski, Janusz and Karlsteen, M}},
  issn         = {{1098-0121}},
  language     = {{eng}},
  number       = {{11}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B (Condensed Matter and Materials Physics)}},
  title        = {{Photoemission study of GaAs (100) grown at low temperature}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.65.115335}},
  doi          = {{10.1103/PhysRevB.65.115335}},
  volume       = {{65}},
  year         = {{2002}},
}