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Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111))

Håkanson, Ulf LU ; Ohlsson, Jonas LU ; Montelius, Lars LU and Samuelson, Lars LU (2002) 6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 20(1). p.226-229
Abstract
Using scanning electron microscopy guidance, atomically resolved scanning tunneling microscopy investigations inside openings formed during the decomposition of a thick SiO2 film on a Si(111) surface have been performed. We report, for the first time, the presence of Ni atoms inside self-formed openings. The SiO2 decomposition as a function of annealing temperature and time was studied. By comparing self-formed and lithographically designed openings in the SiO2 layer we have shown that Ni contamination of the SiO2/Si(111) has a profound effect on the formation of self-induced lateral oxide openings. (C) 2002 American Vacuum Society.
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author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Ultrahigh vacuum scanning tunneling microscopy (UHVSTM)
host publication
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
volume
20
issue
1
pages
226 - 229
publisher
American Vacuum Society
conference name
6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
conference dates
2001-04-22 - 2001-04-26
external identifiers
  • wos:000173985500040
  • scopus:0036118696
ISSN
1520-8567
1071-1023
DOI
10.1116/1.1432968
language
English
LU publication?
yes
id
7c1d7d7c-662d-41c5-882e-8237deee5430 (old id 342781)
date added to LUP
2016-04-01 12:15:16
date last changed
2024-01-08 13:54:55
@inproceedings{7c1d7d7c-662d-41c5-882e-8237deee5430,
  abstract     = {{Using scanning electron microscopy guidance, atomically resolved scanning tunneling microscopy investigations inside openings formed during the decomposition of a thick SiO2 film on a Si(111) surface have been performed. We report, for the first time, the presence of Ni atoms inside self-formed openings. The SiO2 decomposition as a function of annealing temperature and time was studied. By comparing self-formed and lithographically designed openings in the SiO2 layer we have shown that Ni contamination of the SiO2/Si(111) has a profound effect on the formation of self-induced lateral oxide openings. (C) 2002 American Vacuum Society.}},
  author       = {{Håkanson, Ulf and Ohlsson, Jonas and Montelius, Lars and Samuelson, Lars}},
  booktitle    = {{JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}},
  issn         = {{1520-8567}},
  keywords     = {{Ultrahigh vacuum scanning tunneling microscopy (UHVSTM)}},
  language     = {{eng}},
  number       = {{1}},
  pages        = {{226--229}},
  publisher    = {{American Vacuum Society}},
  title        = {{Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111))}},
  url          = {{http://dx.doi.org/10.1116/1.1432968}},
  doi          = {{10.1116/1.1432968}},
  volume       = {{20}},
  year         = {{2002}},
}