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Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor

Lind, Erik LU ; Persson, Ann LU ; Samuelson, Lars LU and Wernersson, Lars-Erik LU (2006) In Nano Letters 6(9). p.1842-1846
Abstract
An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10 000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 mu A/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm(2)/Vs.
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
6
issue
9
pages
1842 - 1846
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:16967988
  • wos:000240465100002
  • scopus:33749684169
  • pmid:16967988
ISSN
1530-6992
DOI
10.1021/nl052468b
language
English
LU publication?
yes
id
35883913-cb7d-45f2-bd0c-a9fbc8aba56d (old id 393998)
date added to LUP
2016-04-01 17:15:15
date last changed
2022-01-29 01:27:54
@article{35883913-cb7d-45f2-bd0c-a9fbc8aba56d,
  abstract     = {{An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10 000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 mu A/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm(2)/Vs.}},
  author       = {{Lind, Erik and Persson, Ann and Samuelson, Lars and Wernersson, Lars-Erik}},
  issn         = {{1530-6992}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{1842--1846}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor}},
  url          = {{http://dx.doi.org/10.1021/nl052468b}},
  doi          = {{10.1021/nl052468b}},
  volume       = {{6}},
  year         = {{2006}},
}