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Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si

Borg, Mattias LU orcid ; Schmid, Heinz ; Moselund, Kirsten E. ; Cutaia, Davide and Riel, Heike (2015) In Journal of Applied Physics 117(14).
Abstract

A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide nanotube templates is studied as function of nanotube diameter (20-140 nm), growth time (0-30 min), growth temperature (520-580 °C), V/III ratio (40-160), nanotube spacing (300-2000 nm), and substrate crystal orientation. It is found that the effective V/III ratio is reduced at least by a factor of two within the nanotube templates compared to the outside, detectable by changes in the growth facet morphology. The reduced V/III ratio originates from the different transport mechanisms for the As and In precursor species; As and In species are both transported by... (More)

A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide nanotube templates is studied as function of nanotube diameter (20-140 nm), growth time (0-30 min), growth temperature (520-580 °C), V/III ratio (40-160), nanotube spacing (300-2000 nm), and substrate crystal orientation. It is found that the effective V/III ratio is reduced at least by a factor of two within the nanotube templates compared to the outside, detectable by changes in the growth facet morphology. The reduced V/III ratio originates from the different transport mechanisms for the As and In precursor species; As and In species are both transported by Knudsen diffusion in the vapor, but an additional contribution of In surface diffusion reduces the V/III ratio. The results reveal the interplay of growth parameters, crystal facets and template geometry and thus are generally applicable for nanoscale selective epitaxy.

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publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Applied Physics
volume
117
issue
14
article number
144303
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:84927618871
ISSN
0021-8979
DOI
10.1063/1.4916984
language
English
LU publication?
no
id
3949f69b-ed27-43c9-9b10-c397e7a6e308
date added to LUP
2016-04-20 10:23:05
date last changed
2022-03-23 22:32:44
@article{3949f69b-ed27-43c9-9b10-c397e7a6e308,
  abstract     = {{<p>A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide nanotube templates is studied as function of nanotube diameter (20-140 nm), growth time (0-30 min), growth temperature (520-580 °C), V/III ratio (40-160), nanotube spacing (300-2000 nm), and substrate crystal orientation. It is found that the effective V/III ratio is reduced at least by a factor of two within the nanotube templates compared to the outside, detectable by changes in the growth facet morphology. The reduced V/III ratio originates from the different transport mechanisms for the As and In precursor species; As and In species are both transported by Knudsen diffusion in the vapor, but an additional contribution of In surface diffusion reduces the V/III ratio. The results reveal the interplay of growth parameters, crystal facets and template geometry and thus are generally applicable for nanoscale selective epitaxy.</p>}},
  author       = {{Borg, Mattias and Schmid, Heinz and Moselund, Kirsten E. and Cutaia, Davide and Riel, Heike}},
  issn         = {{0021-8979}},
  language     = {{eng}},
  month        = {{04}},
  number       = {{14}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Journal of Applied Physics}},
  title        = {{Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si}},
  url          = {{http://dx.doi.org/10.1063/1.4916984}},
  doi          = {{10.1063/1.4916984}},
  volume       = {{117}},
  year         = {{2015}},
}