Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
Persson, Karl-Magnus LU ; Berg, Martin LU ; Borg, Mattias LU
; Wu, Jun
LU
; Johansson, Sofia
LU
; Svensson, Johannes
LU
; Jansson, Kristofer
LU
; Lind, Erik
LU
and Wernersson, Lars-Erik
LU
(2013)
In IEEE Transactions on Electron Devices
60(9).
p.2761-2767
- Abstract
- This paper presents DC and RF characterization as
well as modeling of vertical InAs nanowire MOSFETs with LG =
200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS =
0.5 V show that high transconductance (gm = 1.37 mS/μm), high
drive current (IDS = 1.34 mA/μm), and low on-resistance (RON =
287 Ωμm) can be realized using vertical InAs nanowires on Si
substrates. By measuring the 1/f-noise, the gate area normalized
gate voltage noise spectral density, SVG·LG·WG, is determined to
be lowered one order of magnitude compared to similar devices
with a high-κ film consisting of HfO2 only. Additionally, with a
virtual source model we are able to... (More) - This paper presents DC and RF characterization as
well as modeling of vertical InAs nanowire MOSFETs with LG =
200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS =
0.5 V show that high transconductance (gm = 1.37 mS/μm), high
drive current (IDS = 1.34 mA/μm), and low on-resistance (RON =
287 Ωμm) can be realized using vertical InAs nanowires on Si
substrates. By measuring the 1/f-noise, the gate area normalized
gate voltage noise spectral density, SVG·LG·WG, is determined to
be lowered one order of magnitude compared to similar devices
with a high-κ film consisting of HfO2 only. Additionally, with a
virtual source model we are able to determine the intrinsic
transport properties. These devices (LG = 200 nm) show a high
injection velocity (vinj = 1.7·107 cm/s) with a performance
degradation for array FETs predominantly due to an increase in
series resistance. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4317006
- author
- Persson, Karl-Magnus
LU
; Berg, Martin
LU
; Borg, Mattias
LU
; Wu, Jun
LU
; Johansson, Sofia
LU
; Svensson, Johannes
LU
; Jansson, Kristofer
LU
; Lind, Erik
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- MOSFET, RF, InAs, Nanowire (NW)
- in
- IEEE Transactions on Electron Devices
- volume
- 60
- issue
- 9
- pages
- 2761 - 2767
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000323640300009
- scopus:84883271377
- ISSN
- 0018-9383
- DOI
- 10.1109/TED.2013.2272324
- project
- EIT_WWW Wireless with Wires
- language
- English
- LU publication?
- yes
- id
- 052bca2e-a2c0-466f-b405-b4f149fd0037 (old id 4317006)
- alternative location
- http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6563112
- date added to LUP
- 2016-04-01 13:08:16
- date last changed
- 2022-04-29 18:29:19
@article{052bca2e-a2c0-466f-b405-b4f149fd0037,
abstract = {{This paper presents DC and RF characterization as<br/><br>
well as modeling of vertical InAs nanowire MOSFETs with LG =<br/><br>
200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS =<br/><br>
0.5 V show that high transconductance (gm = 1.37 mS/μm), high<br/><br>
drive current (IDS = 1.34 mA/μm), and low on-resistance (RON =<br/><br>
287 Ωμm) can be realized using vertical InAs nanowires on Si<br/><br>
substrates. By measuring the 1/f-noise, the gate area normalized<br/><br>
gate voltage noise spectral density, SVG·LG·WG, is determined to<br/><br>
be lowered one order of magnitude compared to similar devices<br/><br>
with a high-κ film consisting of HfO2 only. Additionally, with a<br/><br>
virtual source model we are able to determine the intrinsic<br/><br>
transport properties. These devices (LG = 200 nm) show a high<br/><br>
injection velocity (vinj = 1.7·107 cm/s) with a performance<br/><br>
degradation for array FETs predominantly due to an increase in<br/><br>
series resistance.}},
author = {{Persson, Karl-Magnus and Berg, Martin and Borg, Mattias and Wu, Jun and Johansson, Sofia and Svensson, Johannes and Jansson, Kristofer and Lind, Erik and Wernersson, Lars-Erik}},
issn = {{0018-9383}},
keywords = {{MOSFET; RF; InAs; Nanowire (NW)}},
language = {{eng}},
number = {{9}},
pages = {{2761--2767}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
series = {{IEEE Transactions on Electron Devices}},
title = {{Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates}},
url = {{https://lup.lub.lu.se/search/files/3181805/4317012.pdf}},
doi = {{10.1109/TED.2013.2272324}},
volume = {{60}},
year = {{2013}},
}