Electron-Beam Patterning of Polymer Electrolyte Films To Make Multiple Nanoscale Gates for Nanowire Transistors
(2014) In Nano Letters 14(1). p.94-100- Abstract
- We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4319645
- author
- Carrad, Damon J. ; Burke, Adam M. LU ; Lyttleton, Roman W. ; Joyce, Hannah J. ; Tan, Hark Hoe ; Jagadish, Chennupati ; Storm, Kristian LU ; Linke, Heiner LU ; Samuelson, Lars LU and Micolich, Adam P.
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- III-V nanowires, polymer electrolytes, electron beam lithography, nanoelectronics
- in
- Nano Letters
- volume
- 14
- issue
- 1
- pages
- 94 - 100
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000329586700016
- scopus:84892168441
- ISSN
- 1530-6992
- DOI
- 10.1021/nl403299u
- language
- English
- LU publication?
- yes
- id
- ee5afebb-fb99-4aa0-b51d-cd1fe1e0fcaa (old id 4319645)
- date added to LUP
- 2016-04-01 13:16:36
- date last changed
- 2022-01-27 18:18:45
@article{ee5afebb-fb99-4aa0-b51d-cd1fe1e0fcaa, abstract = {{We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.}}, author = {{Carrad, Damon J. and Burke, Adam M. and Lyttleton, Roman W. and Joyce, Hannah J. and Tan, Hark Hoe and Jagadish, Chennupati and Storm, Kristian and Linke, Heiner and Samuelson, Lars and Micolich, Adam P.}}, issn = {{1530-6992}}, keywords = {{III-V nanowires; polymer electrolytes; electron beam lithography; nanoelectronics}}, language = {{eng}}, number = {{1}}, pages = {{94--100}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Electron-Beam Patterning of Polymer Electrolyte Films To Make Multiple Nanoscale Gates for Nanowire Transistors}}, url = {{http://dx.doi.org/10.1021/nl403299u}}, doi = {{10.1021/nl403299u}}, volume = {{14}}, year = {{2014}}, }