Realization of single and double axial InSb-GaSb heterostructure nanowires
Gorji, Sepideh LU ; Ek, Martin LU
and Dick Thelander, Kimberly
LU
(2014)
In Physica Status Solidi. Rapid Research Letters
8(3).
p.269-273
- Abstract
- Heteroepitaxial growth of III-Sb nanowires allows for the formation of various interesting complex structures and enables the combination of their remarkable properties. In this Letter, we investigate the heteroepitaxial growth of Au-seeded InSb and GaSb nanowires using metalorganic vapor phase epitaxy. We demonstrate successful single and double axial InSb-GaSb heterostructures in both directions. The formation properties of the grown nanowires including the compositional change of the particle and the interface sharpness are further discussed. In addition, the decomposition of InSb and GaSb segments and their side facet evolution are explained.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4411142
- author
- Gorji, Sepideh
LU
; Ek, Martin
LU
and Dick Thelander, Kimberly
LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- MOVPE, III-V semiconductors, nanowires, antimonides, heterostructures
- in
- Physica Status Solidi. Rapid Research Letters
- volume
- 8
- issue
- 3
- pages
- 269 - 273
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- wos:000332928600013
- scopus:84896028505
- ISSN
- 1862-6254
- DOI
- 10.1002/pssr.201308331
- language
- English
- LU publication?
- yes
- id
- ac0dd5d0-9a77-4bb7-8688-bf5216d49296 (old id 4411142)
- date added to LUP
- 2016-04-01 10:29:14
- date last changed
- 2023-11-09 22:17:44
@article{ac0dd5d0-9a77-4bb7-8688-bf5216d49296,
abstract = {{Heteroepitaxial growth of III-Sb nanowires allows for the formation of various interesting complex structures and enables the combination of their remarkable properties. In this Letter, we investigate the heteroepitaxial growth of Au-seeded InSb and GaSb nanowires using metalorganic vapor phase epitaxy. We demonstrate successful single and double axial InSb-GaSb heterostructures in both directions. The formation properties of the grown nanowires including the compositional change of the particle and the interface sharpness are further discussed. In addition, the decomposition of InSb and GaSb segments and their side facet evolution are explained.}},
author = {{Gorji, Sepideh and Ek, Martin and Dick Thelander, Kimberly}},
issn = {{1862-6254}},
keywords = {{MOVPE; III-V semiconductors; nanowires; antimonides; heterostructures}},
language = {{eng}},
number = {{3}},
pages = {{269--273}},
publisher = {{John Wiley & Sons Inc.}},
series = {{Physica Status Solidi. Rapid Research Letters}},
title = {{Realization of single and double axial InSb-GaSb heterostructure nanowires}},
url = {{http://dx.doi.org/10.1002/pssr.201308331}},
doi = {{10.1002/pssr.201308331}},
volume = {{8}},
year = {{2014}},
}