Crystal Phase-Dependent Nanophotonic Resonances in InAs Nanowire Arrays
(2014) In Nano Letters 14(10). p.5650-5655- Abstract
- Nanostructures have many material, electronic, and optical properties that are not found in bulk systems and that are relevant for technological applications. For example, nanowires realized from III-V semiconductors can be grown into wurtzite crystal structure. This crystal structure does not naturally exist in bulk where these materials form the zinc-blende counterpart. Being able to concomitantly grow these nanowires in the zinc-blende and/or wurtzite crystal structure prlovides an important degree of control for the design and optimization of optoelectronic applications based on these semiconductor nanostructures. However, the refractive indices of this new crystallographic phase have so far not been elucidated. This shortcoming makes... (More)
- Nanostructures have many material, electronic, and optical properties that are not found in bulk systems and that are relevant for technological applications. For example, nanowires realized from III-V semiconductors can be grown into wurtzite crystal structure. This crystal structure does not naturally exist in bulk where these materials form the zinc-blende counterpart. Being able to concomitantly grow these nanowires in the zinc-blende and/or wurtzite crystal structure prlovides an important degree of control for the design and optimization of optoelectronic applications based on these semiconductor nanostructures. However, the refractive indices of this new crystallographic phase have so far not been elucidated. This shortcoming makes it impossible to predict and utilize he full potential of these new nanostructured materials for optoelectronics applications a careful design and optimization of optical resonances by tuning the nanostrucuted geometry is needed to achieve optimal performance. Here, we report and analyze striking differeences in the optical response of nanophotonic resonances in wurtzite and zinc-blend InAs nanowire arrays. Specifically, through reflectance measurements we find that the resonance can be tuned down to lambda approximate to 380 nm in wurtzite nanowires by decreasing the nanowire diameter. In stark contrast, a similar tuning to below approximate to 500 nm is not possible in the zinc-blende nanowires. Furthermore, we find that the wurtzite nanowires can absorb twice as strongly as the zinc-blende nanowires. We attribute these strikingly large differences in resonant behavior to large differences between the refractive indices of the two crystallographic phases realized in these nanostructures. We anticipate our finding to be relevant for other III-B materials as well as for all material systems that manifest polytypism. Taken together, our results demonstrate crystal phase engineering as a potentially new design dimension for optoelectronics applications. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4787467
- author
- Anttu, Nicklas LU ; Lehmann, Sebastian LU ; Storm, Kristian LU ; Dick Thelander, Kimberly LU ; Samuelson, Lars LU ; Wu, Phillip LU and Pistol, Mats-Erik LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- InAs nanowire array, nanophotonic resonance, zinc-blende, wurtzite
- in
- Nano Letters
- volume
- 14
- issue
- 10
- pages
- 5650 - 5655
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000343016400027
- scopus:84907867565
- pmid:25158002
- ISSN
- 1530-6992
- DOI
- 10.1021/nl502306x
- language
- English
- LU publication?
- yes
- id
- a1277b08-91df-4246-9a63-eab4097352ae (old id 4787467)
- date added to LUP
- 2016-04-01 14:56:18
- date last changed
- 2023-09-03 21:08:03
@article{a1277b08-91df-4246-9a63-eab4097352ae,
abstract = {{Nanostructures have many material, electronic, and optical properties that are not found in bulk systems and that are relevant for technological applications. For example, nanowires realized from III-V semiconductors can be grown into wurtzite crystal structure. This crystal structure does not naturally exist in bulk where these materials form the zinc-blende counterpart. Being able to concomitantly grow these nanowires in the zinc-blende and/or wurtzite crystal structure prlovides an important degree of control for the design and optimization of optoelectronic applications based on these semiconductor nanostructures. However, the refractive indices of this new crystallographic phase have so far not been elucidated. This shortcoming makes it impossible to predict and utilize he full potential of these new nanostructured materials for optoelectronics applications a careful design and optimization of optical resonances by tuning the nanostrucuted geometry is needed to achieve optimal performance. Here, we report and analyze striking differeences in the optical response of nanophotonic resonances in wurtzite and zinc-blend InAs nanowire arrays. Specifically, through reflectance measurements we find that the resonance can be tuned down to lambda approximate to 380 nm in wurtzite nanowires by decreasing the nanowire diameter. In stark contrast, a similar tuning to below approximate to 500 nm is not possible in the zinc-blende nanowires. Furthermore, we find that the wurtzite nanowires can absorb twice as strongly as the zinc-blende nanowires. We attribute these strikingly large differences in resonant behavior to large differences between the refractive indices of the two crystallographic phases realized in these nanostructures. We anticipate our finding to be relevant for other III-B materials as well as for all material systems that manifest polytypism. Taken together, our results demonstrate crystal phase engineering as a potentially new design dimension for optoelectronics applications.}},
author = {{Anttu, Nicklas and Lehmann, Sebastian and Storm, Kristian and Dick Thelander, Kimberly and Samuelson, Lars and Wu, Phillip and Pistol, Mats-Erik}},
issn = {{1530-6992}},
keywords = {{InAs nanowire array; nanophotonic resonance; zinc-blende; wurtzite}},
language = {{eng}},
number = {{10}},
pages = {{5650--5655}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{Crystal Phase-Dependent Nanophotonic Resonances in InAs Nanowire Arrays}},
url = {{http://dx.doi.org/10.1021/nl502306x}},
doi = {{10.1021/nl502306x}},
volume = {{14}},
year = {{2014}},
}