Suspended InAsnanowire gate-all-around field-effect transistors
(2014) In Applied Physics Letters 105(11).- Abstract
- Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I-on of similar to 10 mu A arid an on-off current ratio I-on/I-off of as high as 10(6) at sourcedrain bias voltage of 50 mV and gate length of 1 mu m with a gate underlap spacing of 1 mu m from the source and from the drain. At low temperatures, the on-state current I-on is only slightly reduced, while the ratio I-on/I-off is increased to 10(7). The field-effect mobility in the nanowire channels is also investigated and found to be similar to 1500 cm(2)/V s at room temperature and similar to 2000 cm(2)/V s at low... (More)
- Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I-on of similar to 10 mu A arid an on-off current ratio I-on/I-off of as high as 10(6) at sourcedrain bias voltage of 50 mV and gate length of 1 mu m with a gate underlap spacing of 1 mu m from the source and from the drain. At low temperatures, the on-state current I-on is only slightly reduced, while the ratio I-on/I-off is increased to 10(7). The field-effect mobility in the nanowire channels is also investigated and found to be similar to 1500 cm(2)/V s at room temperature and similar to 2000 cm(2)/V s at low temperatures. The excellent performance of the transistors is explained in terms of strong electrostatic and quantum confinements of carriers in the nanowires. (C) 2014 A1P Publishing LLC. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4793265
- author
- Li, Qiang ; Huang, Shaoyun ; Pan, Dong ; Wang, Jingyun ; Zhao, Jianhua and Xu, Hongqi LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 105
- issue
- 11
- article number
- 113106
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000342995800073
- scopus:84907465085
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4896105
- language
- English
- LU publication?
- yes
- id
- 098b8a98-163b-49f9-8142-869f35e7e9f6 (old id 4793265)
- date added to LUP
- 2016-04-01 10:47:02
- date last changed
- 2023-11-10 05:21:44
@article{098b8a98-163b-49f9-8142-869f35e7e9f6,
abstract = {{Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I-on of similar to 10 mu A arid an on-off current ratio I-on/I-off of as high as 10(6) at sourcedrain bias voltage of 50 mV and gate length of 1 mu m with a gate underlap spacing of 1 mu m from the source and from the drain. At low temperatures, the on-state current I-on is only slightly reduced, while the ratio I-on/I-off is increased to 10(7). The field-effect mobility in the nanowire channels is also investigated and found to be similar to 1500 cm(2)/V s at room temperature and similar to 2000 cm(2)/V s at low temperatures. The excellent performance of the transistors is explained in terms of strong electrostatic and quantum confinements of carriers in the nanowires. (C) 2014 A1P Publishing LLC.}},
author = {{Li, Qiang and Huang, Shaoyun and Pan, Dong and Wang, Jingyun and Zhao, Jianhua and Xu, Hongqi}},
issn = {{0003-6951}},
language = {{eng}},
number = {{11}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Suspended InAsnanowire gate-all-around field-effect transistors}},
url = {{http://dx.doi.org/10.1063/1.4896105}},
doi = {{10.1063/1.4896105}},
volume = {{105}},
year = {{2014}},
}