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Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers

Levchenko, K. ; Andrearczyk, T. ; Domagala, J. Z. ; Wosinski, T. ; Figielski, T. and Sadowski, Janusz LU (2014) In Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics 126(5). p.1121-1124
Abstract
High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Si incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Si into the layers is interpreted as a result of increased spin orbit coupling in the (Ga,Mn)(Bi,As) layers.
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
volume
126
issue
5
pages
1121 - 1124
publisher
Institute of Physics, Polish Academy of Sciences
external identifiers
  • wos:000346069100020
  • scopus:84916910576
ISSN
0587-4246
language
English
LU publication?
yes
id
8e930ea4-5c04-4a56-81cb-85ce61c37792 (old id 4960534)
date added to LUP
2016-04-01 13:40:47
date last changed
2022-03-31 14:53:41
@article{8e930ea4-5c04-4a56-81cb-85ce61c37792,
  abstract     = {{High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Si incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Si into the layers is interpreted as a result of increased spin orbit coupling in the (Ga,Mn)(Bi,As) layers.}},
  author       = {{Levchenko, K. and Andrearczyk, T. and Domagala, J. Z. and Wosinski, T. and Figielski, T. and Sadowski, Janusz}},
  issn         = {{0587-4246}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{1121--1124}},
  publisher    = {{Institute of Physics, Polish Academy of Sciences}},
  series       = {{Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics}},
  title        = {{Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers}},
  volume       = {{126}},
  year         = {{2014}},
}