Effect of misfit strain in (Ga,Mn)(Bi,As) epitaxial layers on their magnetic and magneto-transport properties
(2016) In Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics 129(1). p.90-93- Abstract
Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or tensile strain, respectively. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been... (More)
Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or tensile strain, respectively. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and the Curie temperature in the layers.
(Less)
- author
- Levchenko, K. ; Andrearczyk, T. ; Domagała, J. Z. ; Sadowski, J. LU ; Kowalczyk, L. ; Szot, M. ; Figielski, T. and Wosiński, T.
- organization
- publishing date
- 2016-01-01
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
- volume
- 129
- issue
- 1
- pages
- 90 - 93
- publisher
- Institute of Physics, Polish Academy of Sciences
- external identifiers
-
- scopus:84964818559
- ISSN
- 0587-4246
- DOI
- 10.12693/APhysPolA.129.A-90
- language
- English
- LU publication?
- yes
- id
- 505cb505-e47f-4c60-857b-e792e0287cb0
- date added to LUP
- 2016-07-26 08:25:07
- date last changed
- 2022-04-08 22:21:41
@article{505cb505-e47f-4c60-857b-e792e0287cb0,
abstract = {{<p>Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or tensile strain, respectively. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and the Curie temperature in the layers.</p>}},
author = {{Levchenko, K. and Andrearczyk, T. and Domagała, J. Z. and Sadowski, J. and Kowalczyk, L. and Szot, M. and Figielski, T. and Wosiński, T.}},
issn = {{0587-4246}},
language = {{eng}},
month = {{01}},
number = {{1}},
pages = {{90--93}},
publisher = {{Institute of Physics, Polish Academy of Sciences}},
series = {{Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics}},
title = {{Effect of misfit strain in (Ga,Mn)(Bi,As) epitaxial layers on their magnetic and magneto-transport properties}},
url = {{http://dx.doi.org/10.12693/APhysPolA.129.A-90}},
doi = {{10.12693/APhysPolA.129.A-90}},
volume = {{129}},
year = {{2016}},
}