Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxy
(2015) In Applied Physics Letters 106(17).- Abstract
- We report low-temperature magnetotransport studies of individual InAs nanowires grown by molecule beam epitaxy. At low magnetic fields, the magnetoconductance characteristics exhibit a crossover between weak antilocalization and weak localization by changing either the gate voltage or the temperature. The observed crossover behavior can be well described in terms of relative scales of the transport characteristic lengths extracted based on the quasi-one-dimensional theory of weak localization in the presence of spin-orbit interaction. The spin relaxation length extracted from the magnetoconductance data is found to be in the range of 80-100 nm, indicating the presence of strong spin-orbit coupling in the InAs nanowires. Moreover, the... (More)
- We report low-temperature magnetotransport studies of individual InAs nanowires grown by molecule beam epitaxy. At low magnetic fields, the magnetoconductance characteristics exhibit a crossover between weak antilocalization and weak localization by changing either the gate voltage or the temperature. The observed crossover behavior can be well described in terms of relative scales of the transport characteristic lengths extracted based on the quasi-one-dimensional theory of weak localization in the presence of spin-orbit interaction. The spin relaxation length extracted from the magnetoconductance data is found to be in the range of 80-100 nm, indicating the presence of strong spin-orbit coupling in the InAs nanowires. Moreover, the amplitude of universal conductance fluctuations in the nanowires is found to be suppressed at low temperatures due to the presence of strong spin-orbit scattering. (C) 2015 AIP Publishing LLC. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/7438975
- author
- Wang, L. B. ; Guo, J. K. ; Kang, N. ; Pan, Dong ; Li, Sen ; Fan, Dingxun ; Zhao, Jianhua and Xu, Hongqi LU
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 106
- issue
- 17
- article number
- 173105
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000353839100048
- scopus:84929497908
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4919390
- language
- English
- LU publication?
- yes
- id
- ff86dde9-51c4-41e5-b98c-05328bd62263 (old id 7438975)
- date added to LUP
- 2016-04-01 10:49:11
- date last changed
- 2022-04-20 06:30:47
@article{ff86dde9-51c4-41e5-b98c-05328bd62263,
abstract = {{We report low-temperature magnetotransport studies of individual InAs nanowires grown by molecule beam epitaxy. At low magnetic fields, the magnetoconductance characteristics exhibit a crossover between weak antilocalization and weak localization by changing either the gate voltage or the temperature. The observed crossover behavior can be well described in terms of relative scales of the transport characteristic lengths extracted based on the quasi-one-dimensional theory of weak localization in the presence of spin-orbit interaction. The spin relaxation length extracted from the magnetoconductance data is found to be in the range of 80-100 nm, indicating the presence of strong spin-orbit coupling in the InAs nanowires. Moreover, the amplitude of universal conductance fluctuations in the nanowires is found to be suppressed at low temperatures due to the presence of strong spin-orbit scattering. (C) 2015 AIP Publishing LLC.}},
author = {{Wang, L. B. and Guo, J. K. and Kang, N. and Pan, Dong and Li, Sen and Fan, Dingxun and Zhao, Jianhua and Xu, Hongqi}},
issn = {{0003-6951}},
language = {{eng}},
number = {{17}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxy}},
url = {{http://dx.doi.org/10.1063/1.4919390}},
doi = {{10.1063/1.4919390}},
volume = {{106}},
year = {{2015}},
}