Magnetic anisotropy investigations of (Ga,Mn)As with a large epitaxial strain
(2015) In Journal of Magnetism and Magnetic Materials 396. p.48-52- Abstract
- Magnetic properties of 20 nm thick (Ga,Mn)As layer deposited on (Ga,ln)As buffer with very large epitaxial tensile strain are investigated. Gal,In,As buffer with x=30% provides a 2% lattice mismatch, which is an important extension of the mismatch range studied so far (up to 0.5%). Evolution of magnetic anisotropy as a function of temperature is determined by magnetotransport measurements. Additionally, results of direct measurements of magnetization are shown. (C) 2015 Published by Elsevier B.V.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/8077458
- author
- Juszynski, P. ; Gryglas-Borysiewicz, M. ; Szczytko, J. ; Tokarczyk, M. ; Kowalski, G. ; Sadowski, Janusz LU and Wasik, D.
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Magnetic anisotropy, Spintronic, GaMnAs, Epitaxial pressure
- in
- Journal of Magnetism and Magnetic Materials
- volume
- 396
- pages
- 48 - 52
- publisher
- Elsevier
- external identifiers
-
- wos:000360652700007
- scopus:84939154264
- ISSN
- 0304-8853
- DOI
- 10.1016/j.jmmm.2015.07.077
- language
- English
- LU publication?
- yes
- id
- 71b82b59-f71b-48a5-a478-0a4f4b20cb19 (old id 8077458)
- date added to LUP
- 2016-04-01 14:52:58
- date last changed
- 2023-03-23 10:09:05
@article{71b82b59-f71b-48a5-a478-0a4f4b20cb19,
abstract = {{Magnetic properties of 20 nm thick (Ga,Mn)As layer deposited on (Ga,ln)As buffer with very large epitaxial tensile strain are investigated. Gal,In,As buffer with x=30% provides a 2% lattice mismatch, which is an important extension of the mismatch range studied so far (up to 0.5%). Evolution of magnetic anisotropy as a function of temperature is determined by magnetotransport measurements. Additionally, results of direct measurements of magnetization are shown. (C) 2015 Published by Elsevier B.V.}},
author = {{Juszynski, P. and Gryglas-Borysiewicz, M. and Szczytko, J. and Tokarczyk, M. and Kowalski, G. and Sadowski, Janusz and Wasik, D.}},
issn = {{0304-8853}},
keywords = {{Magnetic anisotropy; Spintronic; GaMnAs; Epitaxial pressure}},
language = {{eng}},
pages = {{48--52}},
publisher = {{Elsevier}},
series = {{Journal of Magnetism and Magnetic Materials}},
title = {{Magnetic anisotropy investigations of (Ga,Mn)As with a large epitaxial strain}},
url = {{http://dx.doi.org/10.1016/j.jmmm.2015.07.077}},
doi = {{10.1016/j.jmmm.2015.07.077}},
volume = {{396}},
year = {{2015}},
}