Mott variable-range hopping transport in a MoS2 nanoflake
(2019) In RSC Advances 9(31). p.17885-17890- Abstract
The transport characteristics of a disordered, multilayered MoS2 nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The MoS2 nanoflake is exfoliated from a bulk MoS2 crystal and the conductance G and magnetoresistance are measured in a four-probe setup over a wide range of temperatures. At high temperatures, we observe that lnG exhibits a -T-1 temperature dependence and the transport in the nanoflake dominantly arises from thermal activation. At low temperatures, where the transport in the nanoflake dominantly takes place via variable-range hopping (VRH) processes, we observe that lnG exhibits a -T-1/3 temperature dependence, an evidence... (More)
The transport characteristics of a disordered, multilayered MoS2 nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The MoS2 nanoflake is exfoliated from a bulk MoS2 crystal and the conductance G and magnetoresistance are measured in a four-probe setup over a wide range of temperatures. At high temperatures, we observe that lnG exhibits a -T-1 temperature dependence and the transport in the nanoflake dominantly arises from thermal activation. At low temperatures, where the transport in the nanoflake dominantly takes place via variable-range hopping (VRH) processes, we observe that lnG exhibits a -T-1/3 temperature dependence, an evidence for the two-dimensional (2D) Mott VRH transport. Furthermore, we observe that the measured low-field magnetoresistance of the nanoflake in the insulator regime exhibits a quadratic magnetic field dependence ∼ αB2 with α ∼ T-1, fully consistent with the 2D Mott VRH transport in the nanoflake.
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- author
- Xue, Jianhong ; Huang, Shaoyun ; Wang, Ji Yin and Xu, H. Q. LU
- organization
- publishing date
- 2019
- type
- Contribution to journal
- publication status
- published
- subject
- in
- RSC Advances
- volume
- 9
- issue
- 31
- pages
- 6 pages
- publisher
- Royal Society of Chemistry
- external identifiers
-
- scopus:85067423157
- ISSN
- 2046-2069
- DOI
- 10.1039/c9ra03150b
- language
- English
- LU publication?
- yes
- id
- 80c3e757-1103-4ca1-a7d9-2c52e641290a
- date added to LUP
- 2019-07-08 10:10:59
- date last changed
- 2023-11-19 10:23:09
@article{80c3e757-1103-4ca1-a7d9-2c52e641290a,
abstract = {{<p>The transport characteristics of a disordered, multilayered MoS<sub>2</sub> nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The MoS<sub>2</sub> nanoflake is exfoliated from a bulk MoS<sub>2</sub> crystal and the conductance G and magnetoresistance are measured in a four-probe setup over a wide range of temperatures. At high temperatures, we observe that lnG exhibits a -T<sup>-1</sup> temperature dependence and the transport in the nanoflake dominantly arises from thermal activation. At low temperatures, where the transport in the nanoflake dominantly takes place via variable-range hopping (VRH) processes, we observe that lnG exhibits a -T<sup>-1/3</sup> temperature dependence, an evidence for the two-dimensional (2D) Mott VRH transport. Furthermore, we observe that the measured low-field magnetoresistance of the nanoflake in the insulator regime exhibits a quadratic magnetic field dependence ∼ αB<sup>2</sup> with α ∼ T<sup>-1</sup>, fully consistent with the 2D Mott VRH transport in the nanoflake.</p>}},
author = {{Xue, Jianhong and Huang, Shaoyun and Wang, Ji Yin and Xu, H. Q.}},
issn = {{2046-2069}},
language = {{eng}},
number = {{31}},
pages = {{17885--17890}},
publisher = {{Royal Society of Chemistry}},
series = {{RSC Advances}},
title = {{Mott variable-range hopping transport in a MoS<sub>2</sub> nanoflake}},
url = {{http://dx.doi.org/10.1039/c9ra03150b}},
doi = {{10.1039/c9ra03150b}},
volume = {{9}},
year = {{2019}},
}