Controlling the growth of epitaxial graphene on metalized diamond (111) surface
(2015) In Applied Physics Letters 107(18).- Abstract
- The 2-dimensional transformation of the diamond (111) surface to graphene has been demonstrated using ultrathin Fe films that catalytically reduce the reaction temperature needed for the conversion of sp(3) to sp(2) carbon. An epitaxial system is formed, which involves the re-crystallization of carbon at the Fe/vacuum interface and that enables the controlled growth of monolayer and multilayer graphene films. In order to study the initial stages of single and multilayer graphene growth, real time monitoring of the system was preformed within a photoemission and low energy electron microscope. It was found that the initial graphene growth occurred at temperatures as low as 500 degrees C, whilst increasing the temperature to 560 degrees C... (More)
- The 2-dimensional transformation of the diamond (111) surface to graphene has been demonstrated using ultrathin Fe films that catalytically reduce the reaction temperature needed for the conversion of sp(3) to sp(2) carbon. An epitaxial system is formed, which involves the re-crystallization of carbon at the Fe/vacuum interface and that enables the controlled growth of monolayer and multilayer graphene films. In order to study the initial stages of single and multilayer graphene growth, real time monitoring of the system was preformed within a photoemission and low energy electron microscope. It was found that the initial graphene growth occurred at temperatures as low as 500 degrees C, whilst increasing the temperature to 560 degrees C was required to produce multi-layer graphene of high structural quality. Angle resolved photoelectron spectroscopy was used to study the electronic properties of the grown material, where a graphene-like energy momentum dispersion was observed. The Dirac point for the first layer is located at 2.5 eV below the Fermi level, indicating an n-type doping of the graphene due to substrate interactions, while that of the second graphene layer lies close to the Fermi level. (C) 2015 AIP Publishing LLC. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/8380468
- author
- Cooil, S. P. ; Wells, J. W. ; Hu, D. ; Niu, Yuran LU ; Zakharov, Alexei LU ; Bianchi, M. and Evans, D. A.
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 107
- issue
- 18
- article number
- 181603
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000364580800015
- scopus:84946595501
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4935073
- language
- English
- LU publication?
- yes
- id
- d49b4b47-6a78-4cee-b8d3-829ad7c1332f (old id 8380468)
- date added to LUP
- 2016-04-01 10:16:29
- date last changed
- 2022-01-25 21:39:18
@article{d49b4b47-6a78-4cee-b8d3-829ad7c1332f,
abstract = {{The 2-dimensional transformation of the diamond (111) surface to graphene has been demonstrated using ultrathin Fe films that catalytically reduce the reaction temperature needed for the conversion of sp(3) to sp(2) carbon. An epitaxial system is formed, which involves the re-crystallization of carbon at the Fe/vacuum interface and that enables the controlled growth of monolayer and multilayer graphene films. In order to study the initial stages of single and multilayer graphene growth, real time monitoring of the system was preformed within a photoemission and low energy electron microscope. It was found that the initial graphene growth occurred at temperatures as low as 500 degrees C, whilst increasing the temperature to 560 degrees C was required to produce multi-layer graphene of high structural quality. Angle resolved photoelectron spectroscopy was used to study the electronic properties of the grown material, where a graphene-like energy momentum dispersion was observed. The Dirac point for the first layer is located at 2.5 eV below the Fermi level, indicating an n-type doping of the graphene due to substrate interactions, while that of the second graphene layer lies close to the Fermi level. (C) 2015 AIP Publishing LLC.}},
author = {{Cooil, S. P. and Wells, J. W. and Hu, D. and Niu, Yuran and Zakharov, Alexei and Bianchi, M. and Evans, D. A.}},
issn = {{0003-6951}},
language = {{eng}},
number = {{18}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Controlling the growth of epitaxial graphene on metalized diamond (111) surface}},
url = {{http://dx.doi.org/10.1063/1.4935073}},
doi = {{10.1063/1.4935073}},
volume = {{107}},
year = {{2015}},
}