Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires
(2017) In Nano Letters 17(6). p.3634-3640- Abstract
We study the surface diffusion and alloying of Sb into GaAs nanowires (NWs) with controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal phases. Using atomically resolved scanning tunneling microscopy, we find that Sb preferentially incorporates into the surface layer of the {110}-terminated Zb segments rather than the {1120}-terminated Wz segments. Density functional theory calculations verify the higher surface incorporation rate into the Zb phase and find that it is related to differences in the energy barrier of the Sb-for-As exchange reaction on the two surfaces. These findings demonstrate a simple processing-free route to compositional engineering at the monolayer level along NWs.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/a24e6e7f-94db-48e9-ab9b-0a8c2f80c0a2
- author
- Hjort, Martin LU ; Kratzer, Peter ; Lehmann, Sebastian LU ; Patel, Sahil J. ; Dick, Kimberly A. LU ; Palmstrøm, Chris J. ; Timm, Rainer LU and Mikkelsen, Anders LU
- organization
- publishing date
- 2017-06-14
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- GaAs, Sb-for-As exchange, STM, surface alloy, wurtzite
- in
- Nano Letters
- volume
- 17
- issue
- 6
- pages
- 7 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:28537733
- scopus:85020745051
- ISSN
- 1530-6984
- DOI
- 10.1021/acs.nanolett.7b00806
- language
- English
- LU publication?
- yes
- id
- a24e6e7f-94db-48e9-ab9b-0a8c2f80c0a2
- date added to LUP
- 2017-07-04 09:24:16
- date last changed
- 2024-02-29 17:44:07
@article{a24e6e7f-94db-48e9-ab9b-0a8c2f80c0a2, abstract = {{<p>We study the surface diffusion and alloying of Sb into GaAs nanowires (NWs) with controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal phases. Using atomically resolved scanning tunneling microscopy, we find that Sb preferentially incorporates into the surface layer of the {110}-terminated Zb segments rather than the {1120}-terminated Wz segments. Density functional theory calculations verify the higher surface incorporation rate into the Zb phase and find that it is related to differences in the energy barrier of the Sb-for-As exchange reaction on the two surfaces. These findings demonstrate a simple processing-free route to compositional engineering at the monolayer level along NWs.</p>}}, author = {{Hjort, Martin and Kratzer, Peter and Lehmann, Sebastian and Patel, Sahil J. and Dick, Kimberly A. and Palmstrøm, Chris J. and Timm, Rainer and Mikkelsen, Anders}}, issn = {{1530-6984}}, keywords = {{GaAs; Sb-for-As exchange; STM; surface alloy; wurtzite}}, language = {{eng}}, month = {{06}}, number = {{6}}, pages = {{3634--3640}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires}}, url = {{http://dx.doi.org/10.1021/acs.nanolett.7b00806}}, doi = {{10.1021/acs.nanolett.7b00806}}, volume = {{17}}, year = {{2017}}, }