Atomic layer etching of gallium nitride (0001)
Kauppinen, Christoffer ; Khan, Sabbir Ahmed ; Sundqvist, Jonas LU ; Suyatin, Dmitry B. LU
; Suihkonen, Sami
; Kauppinen, Esko I.
and Sopanen, Markku
(2017)
In Journal of Vacuum Science and Technology A
35(6).
- Abstract
In this work, atomic layer etching (ALE) of thin film Ga-polar GaN(0001) is reported in detail using sequential surface modification by Cl2 adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a standard reactive ion etching system. The feasibility and reproducibility of the process are demonstrated by patterning GaN(0001) films by the ALE process using photoresist as an etch mask. The demonstrated ALE is deemed to be useful for the fabrication of nanoscale structures and high electron mobility transistors and expected to be adoptable for ALE of other materials.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/bdb87866-96a1-405a-9f15-24adeda19353
- author
- Kauppinen, Christoffer
; Khan, Sabbir Ahmed
; Sundqvist, Jonas
LU
; Suyatin, Dmitry B.
LU
; Suihkonen, Sami
; Kauppinen, Esko I.
and Sopanen, Markku
- organization
- publishing date
- 2017-11-01
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Vacuum Science and Technology A
- volume
- 35
- issue
- 6
- article number
- 060603
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85027715139
- wos:000415685300003
- ISSN
- 0734-2101
- DOI
- 10.1116/1.4993996
- language
- English
- LU publication?
- yes
- id
- bdb87866-96a1-405a-9f15-24adeda19353
- date added to LUP
- 2017-09-06 10:07:08
- date last changed
- 2024-02-29 21:35:17
@article{bdb87866-96a1-405a-9f15-24adeda19353,
abstract = {{<p>In this work, atomic layer etching (ALE) of thin film Ga-polar GaN(0001) is reported in detail using sequential surface modification by Cl<sub>2</sub> adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a standard reactive ion etching system. The feasibility and reproducibility of the process are demonstrated by patterning GaN(0001) films by the ALE process using photoresist as an etch mask. The demonstrated ALE is deemed to be useful for the fabrication of nanoscale structures and high electron mobility transistors and expected to be adoptable for ALE of other materials.</p>}},
author = {{Kauppinen, Christoffer and Khan, Sabbir Ahmed and Sundqvist, Jonas and Suyatin, Dmitry B. and Suihkonen, Sami and Kauppinen, Esko I. and Sopanen, Markku}},
issn = {{0734-2101}},
language = {{eng}},
month = {{11}},
number = {{6}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Journal of Vacuum Science and Technology A}},
title = {{Atomic layer etching of gallium nitride (0001)}},
url = {{http://dx.doi.org/10.1116/1.4993996}},
doi = {{10.1116/1.4993996}},
volume = {{35}},
year = {{2017}},
}