Effect of Ge autodoping during III-V MOVPE growth on Ge substrates
(2017) In Journal of Crystal Growth 475. p.378-383- Abstract
During the MOVPE growth of III-V layers on Ge substrates, Ge atoms can be evaporated or etched from the back of the wafer and reach the growth surface, becoming incorporated into the epilayers. This is the so-called Ge autodoping effect, which we have studied through a set of growth experiments of GaInP and Ga(In)As layers lattice matched to Ge substrates, which have been characterized by Secondary Ion Mass Spectroscopy. The role of V/III ratio and growth rate on Ge autodoping has been studied and a MOVPE reactor pre-conditioning prior to the epitaxial growth of III-V semiconductor layers that mitigates this Ge autodoping has been identified. In addition, the use of 2-in. versus 4-in. Ge substrates has been compared and the use of a... (More)
During the MOVPE growth of III-V layers on Ge substrates, Ge atoms can be evaporated or etched from the back of the wafer and reach the growth surface, becoming incorporated into the epilayers. This is the so-called Ge autodoping effect, which we have studied through a set of growth experiments of GaInP and Ga(In)As layers lattice matched to Ge substrates, which have been characterized by Secondary Ion Mass Spectroscopy. The role of V/III ratio and growth rate on Ge autodoping has been studied and a MOVPE reactor pre-conditioning prior to the epitaxial growth of III-V semiconductor layers that mitigates this Ge autodoping has been identified. In addition, the use of 2-in. versus 4-in. Ge substrates has been compared and the use of a Si3N4 backside coating for the Ge substrates has been evaluated.
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- author
- Barrutia, Laura ; Barrigón, Enrique LU ; García, Iván ; Rey-Stolle, Ignacio and Algora, Carlos
- organization
- publishing date
- 2017-10-01
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- GaInP solar cells, Ge autodoping, III-V semiconductor, Multijunction solar cell, EU Horizon 2020, NEXTNANOCELLS, Grant 656208
- in
- Journal of Crystal Growth
- volume
- 475
- pages
- 6 pages
- publisher
- Elsevier
- external identifiers
-
- scopus:85021789521
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2017.06.022
- language
- English
- LU publication?
- yes
- id
- f6ed4b78-9b7c-4f86-9da5-6ac1be932794
- date added to LUP
- 2018-04-19 13:30:35
- date last changed
- 2022-04-01 23:50:17
@article{f6ed4b78-9b7c-4f86-9da5-6ac1be932794,
abstract = {{<p>During the MOVPE growth of III-V layers on Ge substrates, Ge atoms can be evaporated or etched from the back of the wafer and reach the growth surface, becoming incorporated into the epilayers. This is the so-called Ge autodoping effect, which we have studied through a set of growth experiments of GaInP and Ga(In)As layers lattice matched to Ge substrates, which have been characterized by Secondary Ion Mass Spectroscopy. The role of V/III ratio and growth rate on Ge autodoping has been studied and a MOVPE reactor pre-conditioning prior to the epitaxial growth of III-V semiconductor layers that mitigates this Ge autodoping has been identified. In addition, the use of 2-in. versus 4-in. Ge substrates has been compared and the use of a Si<sub>3</sub>N<sub>4</sub> backside coating for the Ge substrates has been evaluated.</p>}},
author = {{Barrutia, Laura and Barrigón, Enrique and García, Iván and Rey-Stolle, Ignacio and Algora, Carlos}},
issn = {{0022-0248}},
keywords = {{GaInP solar cells; Ge autodoping; III-V semiconductor; Multijunction solar cell; EU Horizon 2020; NEXTNANOCELLS; Grant 656208}},
language = {{eng}},
month = {{10}},
pages = {{378--383}},
publisher = {{Elsevier}},
series = {{Journal of Crystal Growth}},
title = {{Effect of Ge autodoping during III-V MOVPE growth on Ge substrates}},
url = {{http://dx.doi.org/10.1016/j.jcrysgro.2017.06.022}},
doi = {{10.1016/j.jcrysgro.2017.06.022}},
volume = {{475}},
year = {{2017}},
}