From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires
(2016) In Nano Letters 16(1). p.43-637- Abstract
III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, and composition are key to the control of their physical properties. In this work, we present how to grow catalyst-free InAs1-xSbx nanowires, which are stacking fault and twin defect-free over several hundreds of nanometers. We evaluate the impact of their crystal phase purity by probing their electrical properties in a transistor-like configuration and by measuring the phonon-plasmon interaction by Raman spectroscopy. We also highlight the importance of high-quality dielectric coating... (More)
III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, and composition are key to the control of their physical properties. In this work, we present how to grow catalyst-free InAs1-xSbx nanowires, which are stacking fault and twin defect-free over several hundreds of nanometers. We evaluate the impact of their crystal phase purity by probing their electrical properties in a transistor-like configuration and by measuring the phonon-plasmon interaction by Raman spectroscopy. We also highlight the importance of high-quality dielectric coating for the reduction of hysteresis in the electrical characteristics of the nanowire transistors. High channel carrier mobilities and reduced hysteresis open the path for high-frequency devices fabricated using InAs1-xSbx nanowires.
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- author
- Potts, Heidi LU ; Friedl, Martin ; Amaduzzi, Francesca ; Tang, Kechao ; Tütüncüoglu, Gözde ; Matteini, Federico ; Alarcon Lladó, Esther ; McIntyre, Paul C and Fontcuberta i Morral, Anna
- publishing date
- 2016-01-13
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanostructures, Nanotechnology, Nanowires, Semiconductors
- in
- Nano Letters
- volume
- 16
- issue
- 1
- pages
- 7 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:84957991265
- pmid:26686394
- ISSN
- 1530-6992
- DOI
- 10.1021/acs.nanolett.5b04367
- language
- English
- LU publication?
- no
- id
- fa3c213a-5a45-4c60-9dda-f01a93a0bd8a
- date added to LUP
- 2018-03-02 09:50:27
- date last changed
- 2024-01-14 15:56:43
@article{fa3c213a-5a45-4c60-9dda-f01a93a0bd8a, abstract = {{<p>III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, and composition are key to the control of their physical properties. In this work, we present how to grow catalyst-free InAs1-xSbx nanowires, which are stacking fault and twin defect-free over several hundreds of nanometers. We evaluate the impact of their crystal phase purity by probing their electrical properties in a transistor-like configuration and by measuring the phonon-plasmon interaction by Raman spectroscopy. We also highlight the importance of high-quality dielectric coating for the reduction of hysteresis in the electrical characteristics of the nanowire transistors. High channel carrier mobilities and reduced hysteresis open the path for high-frequency devices fabricated using InAs1-xSbx nanowires.</p>}}, author = {{Potts, Heidi and Friedl, Martin and Amaduzzi, Francesca and Tang, Kechao and Tütüncüoglu, Gözde and Matteini, Federico and Alarcon Lladó, Esther and McIntyre, Paul C and Fontcuberta i Morral, Anna}}, issn = {{1530-6992}}, keywords = {{Nanostructures; Nanotechnology; Nanowires; Semiconductors}}, language = {{eng}}, month = {{01}}, number = {{1}}, pages = {{43--637}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires}}, url = {{http://dx.doi.org/10.1021/acs.nanolett.5b04367}}, doi = {{10.1021/acs.nanolett.5b04367}}, volume = {{16}}, year = {{2016}}, }