InAs nanowire metal-oxide-semiconductor capacitors

Roddaro, Stefano; Storm, Kristian; Astromskas, Gvidas; Samuelson, Lars, et al. (2008). InAs nanowire metal-oxide-semiconductor capacitors. Applied Physics Letters, 92, (25)
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| Published | English
Authors:
Roddaro, Stefano ; Storm, Kristian ; Astromskas, Gvidas ; Samuelson, Lars , et al.
Department:
Solid State Physics
Department of Electrical and Information Technology
Mathematical Physics
Linne Center for Nanoscience and Quantum Engineering-lup-obsolete
Nano-lup-obsolete
Research Group:
Linne Center for Nanoscience and Quantum Engineering-lup-obsolete
Nano-lup-obsolete
Abstract:
We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.
ISSN:
0003-6951
LUP-ID:
88cf0ba3-2dd2-46ee-ae6a-d003e2ba1886 | Link: https://lup.lub.lu.se/record/88cf0ba3-2dd2-46ee-ae6a-d003e2ba1886 | Statistics

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