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Amplifier Design Using Vertical InAs Nanowire MOSFETs

Jansson, Kristofer LU ; Lind, Erik LU and Wernersson, Lars Erik LU (2016) In IEEE Transactions on Electron Devices 63(6). p.2353-2359
Abstract

In this paper, an amplifier design using ballistic vertical InAs nanowire (NW) transistors is investigated, focusing on a basic common-source amplifier. The maximum power gain at 90 GHz is evaluated for different NW transistor architectures together with the power dissipation. The linearity of the amplifier is evaluated by estimating the IIP3 and 1-dB compression points. Furthermore, the impact of the parasitic capacitances and resistances is quantified and it is demonstrated that the gain may be increased by a cascode design. It is concluded that a power gain exceeding 20 dB at 90 GHz may be achieved by a common-source amplifier based on an InAs NW transistor architecture. A power consumption below 1 mW is possible, while... (More)

In this paper, an amplifier design using ballistic vertical InAs nanowire (NW) transistors is investigated, focusing on a basic common-source amplifier. The maximum power gain at 90 GHz is evaluated for different NW transistor architectures together with the power dissipation. The linearity of the amplifier is evaluated by estimating the IIP3 and 1-dB compression points. Furthermore, the impact of the parasitic capacitances and resistances is quantified and it is demonstrated that the gain may be increased by a cascode design. It is concluded that a power gain exceeding 20 dB at 90 GHz may be achieved by a common-source amplifier based on an InAs NW transistor architecture. A power consumption below 1 mW is possible, while still maintaining a high power gain. Furthermore, IIP3 exceeding 10 dBm is predicted. The combination of these qualities makes the NW transistor architecture an attractive prospect for low-power amplifiers at millimeter wave frequencies.

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Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Amplifier, InAs, nanowires (NWs), transistor
in
IEEE Transactions on Electron Devices
volume
63
issue
6
pages
7 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • Scopus:84966551166
ISSN
0018-9383
DOI
10.1109/TED.2016.2556283
language
English
LU publication?
yes
id
00419810-08e5-4bef-b829-05625f7f121e
date added to LUP
2016-06-28 12:37:32
date last changed
2016-06-28 12:37:32
@misc{00419810-08e5-4bef-b829-05625f7f121e,
  abstract     = {<p>In this paper, an amplifier design using ballistic vertical InAs nanowire (NW) transistors is investigated, focusing on a basic common-source amplifier. The maximum power gain at 90 GHz is evaluated for different NW transistor architectures together with the power dissipation. The linearity of the amplifier is evaluated by estimating the IIP<sub>3</sub> and 1-dB compression points. Furthermore, the impact of the parasitic capacitances and resistances is quantified and it is demonstrated that the gain may be increased by a cascode design. It is concluded that a power gain exceeding 20 dB at 90 GHz may be achieved by a common-source amplifier based on an InAs NW transistor architecture. A power consumption below 1 mW is possible, while still maintaining a high power gain. Furthermore, IIP<sub>3</sub> exceeding 10 dBm is predicted. The combination of these qualities makes the NW transistor architecture an attractive prospect for low-power amplifiers at millimeter wave frequencies.</p>},
  author       = {Jansson, Kristofer and Lind, Erik and Wernersson, Lars Erik},
  issn         = {0018-9383},
  keyword      = {Amplifier,InAs,nanowires (NWs),transistor},
  language     = {eng},
  month        = {06},
  number       = {6},
  pages        = {2353--2359},
  publisher    = {ARRAY(0x86ca818)},
  series       = {IEEE Transactions on Electron Devices},
  title        = {Amplifier Design Using Vertical InAs Nanowire MOSFETs},
  url          = {http://dx.doi.org/10.1109/TED.2016.2556283},
  volume       = {63},
  year         = {2016},
}