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ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

Shiri Babadi, Aein LU ; Lind, Erik LU and Wernersson, Lars Erik LU (2016) In Applied Physics Letters 108(13).
Abstract

The electrical properties of ZrO2 and HfO2 gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance-voltage (C-V) measurements exhibit a total trap density profile with a minimum of 1 × 1012 cm-2 eV-1 and 4 × 1012 cm-2 eV-1 for ZrO2 and HfO2, respectively, both of which are comparable to the best values... (More)

The electrical properties of ZrO2 and HfO2 gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance-voltage (C-V) measurements exhibit a total trap density profile with a minimum of 1 × 1012 cm-2 eV-1 and 4 × 1012 cm-2 eV-1 for ZrO2 and HfO2, respectively, both of which are comparable to the best values reported for high-κ/III-V devices. Our simulations showed that the measured capacitance is to a large extent affected by the border trap response suggesting a very low density of interface traps. Charge trapping in MOS structures was also investigated using the hysteresis in the C-V measurements. The experimental results demonstrated that the magnitude of the hysteresis increases with increase in accumulation voltage, indicating an increase in the charge trapping response.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
108
issue
13
publisher
American Institute of Physics
external identifiers
  • Scopus:84964329817
ISSN
0003-6951
DOI
10.1063/1.4945430
language
English
LU publication?
yes
id
10bc76af-caf3-47ce-92ee-b7df47ecca96
date added to LUP
2016-06-23 08:49:26
date last changed
2016-06-23 08:49:26
@misc{10bc76af-caf3-47ce-92ee-b7df47ecca96,
  abstract     = {<p>The electrical properties of ZrO<sub>2</sub> and HfO<sub>2</sub> gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance-voltage (C-V) measurements exhibit a total trap density profile with a minimum of 1 × 10<sup>12</sup> cm<sup>-2</sup> eV<sup>-1</sup> and 4 × 10<sup>12</sup> cm<sup>-2</sup> eV<sup>-1</sup> for ZrO<sub>2</sub> and HfO<sub>2</sub>, respectively, both of which are comparable to the best values reported for high-κ/III-V devices. Our simulations showed that the measured capacitance is to a large extent affected by the border trap response suggesting a very low density of interface traps. Charge trapping in MOS structures was also investigated using the hysteresis in the C-V measurements. The experimental results demonstrated that the magnitude of the hysteresis increases with increase in accumulation voltage, indicating an increase in the charge trapping response.</p>},
  author       = {Shiri Babadi, Aein and Lind, Erik and Wernersson, Lars Erik},
  issn         = {0003-6951},
  language     = {eng},
  month        = {03},
  number       = {13},
  publisher    = {ARRAY(0xb96f708)},
  series       = {Applied Physics Letters},
  title        = {ZrO<sub>2</sub> and HfO<sub>2</sub> dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment},
  url          = {http://dx.doi.org/10.1063/1.4945430},
  volume       = {108},
  year         = {2016},
}