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Electron microscopy based studies of catalytically grown semiconductor nanowires

Gustafsson, Anders LU ; Wallenberg, Reine LU and Wagner, Jakob LU (2008) In Beam Injection Based Nanocharacterization of Advanced Materials p.1-35
Abstract
We give an introduction to modern electron microscopy techniques, applied to semiconductor structures. We concentrate on the analytical capabilities of high resolution transmission electron microscopy (TEM) and luminescence-based analysis, cathodoluminescence, in the scanning electron microscope. For the TEM, we will demonstrate a number of techniques and detection schemes, such as energy dispersive analysis of X-rays, electron energy loss spectroscopy, high-angle annular darkfield, and Fourier and strain mapping. The capabilities of the techniques are illustrated by various semiconductor nanowires (NWs), grown catalytically by gold seed-particles on planar substrates. These structures include homogeneous NWs, heterostructured NWs,... (More)
We give an introduction to modern electron microscopy techniques, applied to semiconductor structures. We concentrate on the analytical capabilities of high resolution transmission electron microscopy (TEM) and luminescence-based analysis, cathodoluminescence, in the scanning electron microscope. For the TEM, we will demonstrate a number of techniques and detection schemes, such as energy dispersive analysis of X-rays, electron energy loss spectroscopy, high-angle annular darkfield, and Fourier and strain mapping. The capabilities of the techniques are illustrated by various semiconductor nanowires (NWs), grown catalytically by gold seed-particles on planar substrates. These structures include homogeneous NWs, heterostructured NWs, core-shell NWs and branched NWs. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
Beam Injection Based Nanocharacterization of Advanced Materials
editor
Salviati, Giancarlo; Sekiguchi, T; Heun, S and Gustafsson, Anders
pages
1 - 35
publisher
Research Signpost
ISBN
978-81-308-0226-8
language
English
LU publication?
yes
id
ef426a54-c2bb-468c-b26d-2cc1513c1624 (old id 1699407)
date added to LUP
2010-10-25 12:56:41
date last changed
2016-04-16 09:17:13
@misc{ef426a54-c2bb-468c-b26d-2cc1513c1624,
  abstract     = {We give an introduction to modern electron microscopy techniques, applied to semiconductor structures. We concentrate on the analytical capabilities of high resolution transmission electron microscopy (TEM) and luminescence-based analysis, cathodoluminescence, in the scanning electron microscope. For the TEM, we will demonstrate a number of techniques and detection schemes, such as energy dispersive analysis of X-rays, electron energy loss spectroscopy, high-angle annular darkfield, and Fourier and strain mapping. The capabilities of the techniques are illustrated by various semiconductor nanowires (NWs), grown catalytically by gold seed-particles on planar substrates. These structures include homogeneous NWs, heterostructured NWs, core-shell NWs and branched NWs.},
  author       = {Gustafsson, Anders and Wallenberg, Reine and Wagner, Jakob},
  editor       = {Salviati, Giancarlo and Sekiguchi, T and Heun, S and Gustafsson, Anders},
  isbn         = {978-81-308-0226-8},
  language     = {eng},
  pages        = {1--35},
  publisher    = {ARRAY(0xb83e178)},
  series       = {Beam Injection Based Nanocharacterization of Advanced Materials},
  title        = {Electron microscopy based studies of catalytically grown semiconductor nanowires},
  year         = {2008},
}