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The Crystal Structure of III-V Semiconductor Nanowires: Growth and Characterization

Bolinsson, Jessica LU (2010)
Abstract
This thesis concerns growth and characterization of gold-particle seeded nanowires of III-V semiconductor materials (III-V NWs). The nanowires were grown using metal-organic vapour phase epitaxy (MOVPE) and characterized by various microscopy techniques. In particular cross-sectional scanning tunnelling microscopy (XSTM) and cathodoluminescence microscopy (CL) were employed to investigate heterostructured nanowires. In addition, the formation of the crystal structure within the nanowires as an effect of growth conditions was investigated by transmission electron microscopy.

This thesis first presents an extensive description of the crystal structure and phases which have been observed in III-V NWs. It then gives an overview of... (More)
This thesis concerns growth and characterization of gold-particle seeded nanowires of III-V semiconductor materials (III-V NWs). The nanowires were grown using metal-organic vapour phase epitaxy (MOVPE) and characterized by various microscopy techniques. In particular cross-sectional scanning tunnelling microscopy (XSTM) and cathodoluminescence microscopy (CL) were employed to investigate heterostructured nanowires. In addition, the formation of the crystal structure within the nanowires as an effect of growth conditions was investigated by transmission electron microscopy.

This thesis first presents an extensive description of the crystal structure and phases which have been observed in III-V NWs. It then gives an overview of the main characterization methods that were used in the included papers. Another part that is included concerns epitaxial growth in general and MOVPE in particular. The last part of the thesis is an outlook in which some important questions and possible future directions are presented and discussed.

The basis for this thesis is 9 appended papers: Paper I-II present results from XSTM investigations; papers III-IV and VIII-IX concerns investigations of how to control the crystal phases and the density of defects within III-V NWs; paper V present a study of the effect of gold-particle fabrication method and deposition method on MOVPE growth of GaAs NWs; papers VI-VII present measurements of the ambipolar diffusion length in III-V NWs using cathodoluminescence. (Less)
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author
supervisor
opponent
  • Professor LaPierre, Ray, McMaster University, Hamilton, Canada
organization
publishing date
type
Thesis
publication status
published
subject
keywords
metal-organic vapour phase epitaxy, MOVPE, scanning tunneling microscopy, cathodoluminescence, XSTM, crystal structure, polytypism, III-V semiconductor materials, nanowires, Fysicumarkivet A:2010:Bolinsson
pages
200 pages
defense location
Lecture hall B, Department of Physics, Sölvegatan 14 A, Lund University Faculty of Engineering
defense date
2010-12-16 13:15
ISBN
978-91-7473-051-7
language
English
LU publication?
yes
id
d34c710c-a126-4d40-8ad8-ba5481e2a48b (old id 1718789)
date added to LUP
2010-11-19 12:07:20
date last changed
2016-09-19 08:45:16
@misc{d34c710c-a126-4d40-8ad8-ba5481e2a48b,
  abstract     = {This thesis concerns growth and characterization of gold-particle seeded nanowires of III-V semiconductor materials (III-V NWs). The nanowires were grown using metal-organic vapour phase epitaxy (MOVPE) and characterized by various microscopy techniques. In particular cross-sectional scanning tunnelling microscopy (XSTM) and cathodoluminescence microscopy (CL) were employed to investigate heterostructured nanowires. In addition, the formation of the crystal structure within the nanowires as an effect of growth conditions was investigated by transmission electron microscopy. <br/><br>
	This thesis first presents an extensive description of the crystal structure and phases which have been observed in III-V NWs. It then gives an overview of the main characterization methods that were used in the included papers. Another part that is included concerns epitaxial growth in general and MOVPE in particular. The last part of the thesis is an outlook in which some important questions and possible future directions are presented and discussed.<br/><br>
	The basis for this thesis is 9 appended papers: Paper I-II present results from XSTM investigations; papers III-IV and VIII-IX concerns investigations of how to control the crystal phases and the density of defects within III-V NWs; paper V present a study of the effect of gold-particle fabrication method and deposition method on MOVPE growth of GaAs NWs; papers VI-VII present measurements of the ambipolar diffusion length in III-V NWs using cathodoluminescence.},
  author       = {Bolinsson, Jessica},
  isbn         = {978-91-7473-051-7},
  keyword      = {metal-organic vapour phase epitaxy,MOVPE,scanning tunneling microscopy,cathodoluminescence,XSTM,crystal structure,polytypism,III-V semiconductor materials,nanowires,Fysicumarkivet A:2010:Bolinsson},
  language     = {eng},
  pages        = {200},
  title        = {The Crystal Structure of III-V Semiconductor Nanowires: Growth and Characterization},
  year         = {2010},
}